Development of compact model for tunnel field-effect transistors

Japanese researchers have developed a compact model for circuit simulation to predict the circuit behavior of tunnel field-effect transistors (tunnel FETs). This device-operation model simulates current–voltage characteristics ...

Researchers create working Mott transistor prototype

(Phys.org) -- Engineers from several research organizations working together in Japan have developed a working prototype of a Mott transistor, a possible alternative to the standard silicon based field-effect transistor (FET). ...

More energy efficient transistors through quantum tunneling

(PhysOrg.com) -- Researchers at the University of Notre Dame and Pennsylvania State University have announced breakthroughs in the development of tunneling field effect transistors (TFETs), a semiconductor technology that ...

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