Japanese researchers from the National Institute of Advanced Industrial Science and Technology (AIST), have developed an all-printed flexible pressure sensor in collaboration with Ajinomoto Co., Inc.
Engineering
Aug 16, 2012
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Promising news for those who relish the prospects of a one-inch chip storing multiple terabytes of data, some clarity has been brought to the here-to-fore confusing physics of ferroelectric nanomaterials. A multi-institutional ...
Nanophysics
Jul 10, 2012
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As scientists learn to manipulate little-understood nanoscale materials, they are laying the foundation for a future of more compact, efficient, and innovative devices. In research to be published online July 8 in the journal ...
General Physics
Jul 8, 2012
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Researchers from the Institute of Materials Structure Science at KEK and RIKEN discovered a new phenomenon, “electronic ferroelectricity,” through electric polarization measurements and synchrotron X-ray diffraction ...
General Physics
Jun 4, 2012
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(Phys.org) -- Ferroelectricity, which was first observed in the 1940s, is an interesting phenomenon involving the spontaneous (non-induced) formation of charge polarization (separation of charge) in certain materials. This ...
Condensed Matter
May 18, 2012
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(Phys.org) -- Some materials, by their nature, do what we want them to do -- notably, the ubiquitous, semiconducting silicon found in almost every electronic device. But sometimes, naturally occurring materials need a little ...
Condensed Matter
Apr 12, 2012
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Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...
Electronics & Semiconductors
Mar 5, 2012
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(PhysOrg.com) -- A surprising atomic-scale wiggle underlies the way a special class of materials reacts to light, according to research that may lead to new devices for harvesting solar energy.
General Physics
Feb 29, 2012
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(PhysOrg.com) -- Researchers have developed a “soft template infiltration” technique for fabricating free-standing piezoelectrically active ferroelectric nanotubes and other nanostructures from PZT – a material ...
Nanophysics
Feb 22, 2012
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Fujitsu Semiconductor Europe today introduces a new FRAM (Ferroelectric Random Access Memory) product series with an extended voltage range of 3.0V – 5.5V, offering significantly greater design flexibility for customers ...
Electronics & Semiconductors
Feb 14, 2012
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