NXP brings GaN technology mainstream
At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.
Electronics & Semiconductors
Jun 7, 2011
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News tagged with amplifier
World's first GaN HEMT T/R module operating in the C-Ku band
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...
Electronics & Semiconductors
Jun 6, 2011
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DOCOMO develops compact multi-band power amplifier
NTT DOCOMO today announced that it has developed a prototype power amplifier for six frequency bands between 1.5 GHz and 2.5 GHz in a form factor smaller than multiple single-band power amplifiers conventionally used to provide ...
Electronics & Semiconductors
May 20, 2011
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Mayan buildings may have operated as sound projectors
(PhysOrg.com) -- A team of archaeologists from Mexico say buildings built by the Maya people could have served as projection systems and amplifiers to deliver sounds over relatively large distances.
Swede broadcasts music from his stomach
A Swedish man broadcast music from his stomach for several hours via a mini audio system, but said he was disappointed by the sound quality.
Other
Nov 26, 2010
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Lastest graphene research could lead to improvements in bluetooth headsets and other devices
Researchers at the UC Riverside Bourns College of Engineering have built and successfully tested an amplifier made from graphene that could lead to more efficient circuits in electronic chips, such as those used in Bluetooth ...
Nanomaterials
Oct 18, 2010
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Triple-mode transistors show potential: Researchers introduce graphene-based amplifiers
(PhysOrg.com) -- Rice University research that capitalizes on the wide-ranging capabilities of graphene could lead to circuit applications that are far more compact and versatile than what is now feasible with silicon-based ...
Nanophysics
Oct 13, 2010
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Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band
Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in ...
Electronics & Semiconductors
Oct 6, 2010
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Researchers develop world’s first blue-violet ultrafast pulsed semiconductor laser with 100 watt output
Tohoku University and Sony researchers have succeeded in developing a blue-violet ultrafast pulsed semiconductor laser with dramatically improved peak laser beam output levels that are 100 times that of the world's current ...
General Physics
Jul 21, 2010
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Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring World's Highest Output in the C-Ku Band
Fujitsu today announced the development of an amplifier based on gallium-nitride (GaN) high electron mobility transistor (HEMT) technology, which features an output of 12.9W - more than twice the output of previous amplifiers ...
Electronics & Semiconductors
May 28, 2010
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