See also stories tagged with Flash memory
A loose and rattling part in your cell phone is generally a cause for concern. Like most other electronic devices, your phone works by moving electrons through fixed circuit pathways. If electrons are not sufficiently contained ...
The perfect data storage solution should offer fast access to data, maintain data in the absence of external power, and be able to withstand large numbers of read–write cycles. Phase-change random access memory (PCRAM), ...
Chinese scientists have shown that magnetic memory, logic and sensor cells can be made faster and more energy efficient by using an electric, not magnetic, field to flip the magnetization of the sensing layer only about halfway, ...
To meet continually increasing demand for greater capacity and performance in data storage cards for digital cameras, digital camcorders, MP3 players and PDAs, Toshiba America Electronic Components, Inc. announced the availability ...
Toshiba America Electronic Components, Inc. (TAEC), announced today that the company's multi-level cell (MLC) NAND flash, developed by Toshiba Corp. (Toshiba), is now supported by SigmaTel's popular D-Major series of audio ...
Leading Flash memory supplier confirms viability of 'Post-Flash' candidate Geneva, June 16, 2004 - STMicroelectronics, one of the world's leading semiconductor suppliers, has announced significant progress in the development ...
Munich, Germany – June 22, 2004 – Infineon Technologies is leading in the development of new non-volatile memory technologies. At the 2004 Symposia on VLSI Technologies and Circuits, June 15 - 19 in Honolulu, Hawaii, ...
Fujitsu Laboratories and the University of Toronto today announced that they have jointly developed the world's first high-reliability read-method for use with spin-torque-transfer (STT) MRAM that is insusceptible to erroneous ...
Samsung Electronics, the world leader in advanced semiconductor technology, announced today that it is introducing software designed to optimize the high performance features of its proprietary embedded flash memories: OneNAND, ...
Samsung Electronics today announced that it has developed the industry's first 40-nanometer memory device. The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, ...
