The rapid advancement of technologies like artificial intelligence (AI) and the Internet of Things (IoT) has heightened the demand for high-speed, energy-efficient memory devices. Traditional memory technologies often struggle ...
AI transformational impact is well under way. But as AI technologies develop, so too does their power consumption. Further advancements will require AI chips that can process AI calculations with high energy efficiency. This ...
Spin Hall nano-oscillators (SHNOs) are nanoscale spintronic devices that convert direct current into high-frequency microwave signals through spin wave auto-oscillations. This is a type of nonlinear magnetization oscillations ...
While most multiferroics can't operate above room temperature, a team of researchers at Tohoku University demonstrated that terbium oxide Tb2(MoO4)3 works as a multiferroic even at 160°C.
The role of electrons and their negative charge in electric current is well established. Electrons also exhibit other intrinsic properties that are associated, for example, with considerable potential for enhancing data storage ...
A Franco-German research team, including members from the University of Freiburg, shows that supramolecular chemistry enables efficient spin communication through hydrogen bonds. The work is published in the journal Nature ...
Half-metals are unique magnetic compounds that have been attracting interest in the development of mass-storage technologies. Some of the materials in the family of Heusler alloys were predicted to have a half-metallic nature, ...
Our data-driven world demands more—more capacity, more efficiency, more computing power. To meet society's insatiable need for electronic speed, physicists have been pushing the burgeoning field of spintronics.
A team of researchers has discovered a new way to control the magnetic behavior of quantum materials using applied voltages. Specifically, the material lanthanum strontium manganite (LSMO), which is magnetic and metallic ...
A research team has achieved multilevel spin-based modulation of magnetoresistance in high-performance organic spin valve (OSV) devices. The study was published in Advanced Materials.
