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Today Intel Corporation and Micron Technology, Inc. introduced the industry's first sub-40 nanometer NAND memory device, unveiling a 34nm 32 gigabit multi-level cell chip. This process technology was jointly developed by ...
SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan.
Intel and Micron Technology unveiled a high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for storage. The new technology – developed jointly by ...
Toshiba Corporation today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories.
Toshiba Corp. today announced their entry into the emerging market for NAND-flash-based solid-state drives (SSDs) with a series of products featuring multi-level cell (MLC) NAND flash memory.
To support its embedded technology customers, Intel Corporation announced today plans to extend its embedded NOR flash products to the 65-nanometer (nm) generation.
Samsung Electronics announced today that it has become the first to begin mass producing 16 gigabit NAND flash, the highest capacity memory chip now available. The company said it will fabricate the devices in 51 nanometers, ...
Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
Intel Corporation announced today its entry into solid state drives with the Intel Z-U130 Value Solid-State Drive. Based on NAND flash memory with industry standard USB interfaces, the Intel Z-U130 Value Solid State Drive ...
SanDisk today announced that it expects to see the launch of the next generation of NAND flash memory this quarter as it begins the transition from 70 nanometer (nm) to 56nm multi-level cell (MLC) flash memory chips at Fab ...
