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Sep 22, 2004

New Multimedia Memory Cards for High Speed Data Transmission in Mobile Digital Applications

Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, announced today that it has developed new memory cards that carry both Samsung flash memory and an in-house designed card controller, meeting ...

Consumer & Gadgets Oct 24, 2007

Sony Newly Improved Cyber-Shot 4GB Internal Memory Set for Launch

Sony is set to release the latest member of the Cyber-shot family. It has 4GB of internal flash memory and a host of improved features. The release date for Japan is late November and the rest of the world will get its chance ...

General Physics Jun 14, 2011

Understanding magnetic memory one layer at a time

(PhysOrg.com) -- "Smaller, faster, cheaper" is Silicon Valley's mantra for progress. But as critical components shrink to near atomic dimensions, it’s becoming much more difficult for their developers to understand ...

Electronics & Semiconductors Dec 6, 2010

Imec reports progress in deep sub-micron scaling for logic and memory

At the International Electron Devices Meeting in San Francisco Imec's advanced CMOS research program reports promising advances in scaling logic, DRAM and non-volatile memory.

Hardware Feb 11, 2008

SanDisk Brings iNAND 16-Gigabyte Embedded Flash Drive to Market

SanDisk Corporation, the proven leader in flash memory storage cards, today announced the 16-gigabyte (GB) iNAND embedded flash drive (EFD).

Consumer & Gadgets May 9, 2007

New Laptop Data Protection Comes in a USB Flash Card

An analyst says that the low price point and ease of use could compel consumers, small and midsize businesses, and remote offices to buy a new package that includes IBM security software.

General Physics Dec 14, 2012

Engineers develop new magnetoelectric computer memory

(Phys.org)—By using electric voltage instead of a flowing electric current, researchers from UCLA's Henry Samueli School of Engineering and Applied Science have made major improvements to an ultra-fast, high-capacity class ...

Electronics & Semiconductors Oct 29, 2009

Intel Reports Breakthrough in Stacked, Cross Point Phase Change Memory Technology

Intel Corp. and Numonyx today announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types.

Nanophysics Jan 17, 2018

Ultra-thin memory storage device paves way for more powerful computing

Engineers worldwide have been developing alternative ways to provide greater memory storage capacity on even smaller computer chips. Previous research into two-dimensional atomic sheets for memory storage has failed to uncover ...

Optics & Photonics Feb 27, 2012

NTT researchers develop breakthrough optical memory device

(PhysOrg.com) -- To improve transmission speeds, the Internet has transitioned over the years from one using copper to fiber optic cabling. Unfortunately, this has caused a bottleneck to occur where the light signals meet ...

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