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IBM today unveiled a strategic initiative to drive Flash technology further into the enterprise to help organizations better tackle the mounting challenges of Big Data.
Toshiba Corporation today announced a new three dimensional memory cell array structure that enhances cell density and data capacity without relying on advances in process technology, and with minimal increase in the chip ...
Imec, the world-leading research and innovation hub in nanoelectronics and digital technology, announced today at the 2017 Symposia on VLSI Technology and Circuits the world's first demonstration of a vertically stacked ferroelectric ...
A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology ...
Renesas Electronics today announced the availability of a large number of new low-power, low voltage microcontrollers (MCUs). By expanding the low-power, low-voltage RX200 Series to include versions offering from 64 KB to ...
Computers are getting smaller and smaller. And as hand-held devices — from mobile phones and cameras to music players and laptops — get more powerful, the race is on to develop memory formats that can satisfy the ever-growing ...
Toshiba Corporation today announced a new series of embedded NAND Flash memories for mobile phones offering both a configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area, allowing applications ...
Samsung Electronics will release the world’s first PCs embedded with a 32-Gigabyte NAND flash-based solid state disk (SSD). This marks the first time that NAND flash has moved into a commercial mobile computing application ...
Recent tests found no evidence of X-ray scanner damage to digital camera media cards or to the images they hold. The tests of scanner models currently in use in the U.S. transportation industry were jointly conducted by the ...
Researchers from the Moscow Institute of Physics and Technology, along with their colleagues from Germany and the U.S., have achieved a breakthrough in nonvolatile memory devices. The team came up with a unique method for ...
