Apr 20, 2006
In Brief: Samsung to use Infineon chip in EDGE phone
Samsung has selected Germany's Infineon to supply radio frequency chips for its line of EDGE mobile phones, which will debut later this year.
Search results for Infineon
Mar 31, 2006
Infineon to spin off memory unit in May
Infineon Technologies will complete the spinoff of its memory-products unit ahead of schedule later this spring.
Mar 27, 2006
Researchers get neurons and silicon talking
European researchers have created an interface between mammalian neurons and silicon chips. The development is a crucial first step in the development of advanced technologies that combine silicon circuits with a mammal’s ...
Mar 7, 2006
Chip project to bring Bluetooth to players
SigmaTel and Infineon are jointly developing semiconductors to enable Bluetooth solutions to be included in portable media players.
Feb 7, 2006
Infineon Successfully Produced First 65nm Samples in Multiple Fabs
Infineon Technologies AG has produced first sample chips in its advanced 65nm low-power and high-performance CMOS platform technology. Infineon leveraged the results of the industry leading 65nm/45nm alliance composed of ...
Jan 24, 2006
Applied Materials, IMEC Team to Develop Innovative 32nm, 22nm Interconnects
Applied Materials and IMEC, Europe's leading independent nanoelectronics and nanotechnology research center, announced today a significant joint effort to develop 32nm and 22nm-node copper/low k interconnect processing technologies ...
Jan 19, 2006
Briefs: InterDigital, Infineon team up 3G software
Longtime allies InterDigital Communications and Infineon Technologies are teaming up on development of HSDPA software for 3G mobile networks.
Dec 9, 2005
Briefs: Siemens supports Infineon's Malaysia plant
Siemens said Friday it will provide the information-technology infrastructure for Infineon Technologies' semiconductor factory in Malaysia.
Dec 7, 2005
IMEC reports CMOS integration of Hf-based dielectrics with Ni FUSI gates
At today’s IEEE International Electron Devices Meeting, IMEC announces a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous 2-step silicidation. The potential of ...
Nov 28, 2005
World's first SOI MOSFET with crystalline Gd2O3
Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric.
