Intel, Corning to Develop Extreme Ultraviolet Photomask Substrates for 32nm Node

Jul 06, 2005

Intel Corporation and Corning Incorporated have entered into an agreement to develop ultra low thermal expansion ULE glass photomask substrates required for Extreme Ultraviolet (EUV) lithography technology. These substrates are needed to develop low defect EUV photomasks to enable 32nm node high-volume production using EUV lithography.

“Corning has a rich history of developing innovative products and our extensive optical materials and process knowledge have positioned the ULE product as the optimal material for EUV photomask substrates,” stated Jim Steiner, senior vice president and general manager, Corning Specialty Materials.

Intel’s leading position in advanced semiconductor manufacturing will provide the expertise Corning requires to respond rapidly to industry requirements. The joint development program will help to enable chip production using EUV technology starting in 2009.

“The cooperative efforts of Corning and Intel will provide the opportunity to develop ULE® glass substrates and position them as the material of choice for EUV photomasks,” Steiner said. “We are excited to be working with a technology leader in the semiconductor industry, and this reaffirms Corning’s commitment to develop the best optical materials available for semiconductor lithography”.

“Driving down EUV photomask defect levels is a critical issue for the commercialization of EUV technology. Corning and Intel plan to address the mask substrate contribution to this issue,” said Janice Golda, Intel’s director of lithography. “The development of higher-quality EUV masks, along with Intel’s related efforts in light sources, lithography equipment and new photo resists, will help create the infrastructure needed to position EUV lithography as the key technology for the future.”

Lithography tools are used in chip making to “print” patterns on a silicon wafer. Today, the industry uses lithography tools that use a 193nm wavelength of light to “print” transistors as small as 50nm. That is equivalent to a painter trying to draw very fine lines using a thick brush. EUV lithography technology will use light that is only 13.5nm wavelength of light, so it can provide chip makers with a very “fine brush” to “draw” smaller transistors in the future.

EUV lithography has been identified by the International Roadmap of Semiconductor Technology as the leading technology solution for next-generation lithography after the current 193nm generation of lithography tools.

Explore further: Sony hacking fallout puts all companies on alert

add to favorites email to friend print save as pdf

Related Stories

EUV machines to swing into commercial action in 2015

Aug 08, 2013

(Phys.org) —ASML develops technology for high-tech lithography machines for the semiconductor industry. The company, based in The Netherlands, manufactures equipment that is used to transfer circuit patterns ...

Recommended for you

Coping with floods—of water and data

2 minutes ago

Halloween 2013 brought real terror to an Austin, Texas, neighborhood, when a flash flood killed four residents and damaged roughly 1,200 homes. Following torrential rains, Onion Creek swept over its banks and inundated the ...

Fully automated: Thousands of blood samples every hour

29 minutes ago

Siemens is supplying automation technology for the longest and one of the most cutting-edge sample processing lines in any clinical laboratory. The line, or automation track, 200 meters long, in Marlborough, ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.