TSMC Qualifies Applied Materials' Gate Stack System for Its Leading-Edge 65nm Transistor Processes

May 06, 2005

Applied Materials, Inc. announced today that Taiwan Semiconductor Manufacturing Co. (TSMC) has qualified the Applied Centura Gate Stack system with DPN (decoupled plasma nitridation) technology for all of its 65nm-generation transistor fabrication processes. This advanced technology enabled TSMC to achieve their 65nm equivalent oxide thickness (EOT) scaling targets while increasing device speed.

Dr. Mong-Song Liang, senior director, Advanced Modules Technology Division, R&D, of TSMC, said, "Applied's single-wafer gate stack system has played a significant role in TSMC's leadership in advanced transistor fabrication. The gate stack system with Applied's DPN technology has helped us scale our transistors and extend oxynitride gate dielectrics to the 65nm generation, for both high performance and low-power applications, with the productivity needed for volume production. By combining Applied Materials' hardware and process technology expertise with TSMC's integration and manufacturing know-how, we were able to accelerate the implementation of this advanced gate stack technology, demonstrating the value of our strong relationship with Applied."

The Applied Gate Stack system provides excellent film interface control by integrating DPN, Radiance RTP, In Situ Steam Generation (ISSG) oxidation and polysilicon deposition processes on the Centura platform. TSMC already uses the 300mm Applied Centura Gate Stack system in its fabs, where its advanced single-wafer technology and multi-process integration capabilities have made it tool of record for transistor manufacturing. Unlike other gate oxynitride techniques, Applied's DPN technology uses an advanced plasma source to create a low-energy plasma, which results in precise nitrogen profile control.

"TSMC is a world leader in high-performance transistor fabrication, and we are delighted to contribute to their extension of oxynitride gate dielectric technology to 65nm," said Dr. Randhir Thakur, group vice president and general manager of Applied Materials' Front End Products group. "Our unique, fully integrated approach to gate stack fabrication provides optimum drive current and minimum gate leakage and allows additional generations of scaling over other technologies. The Gate Stack system is part of our suite of RunFastStayCool solutions for boosting device performance in next-generation transistors."

Explore further: Growing app industry has developers racing to keep up

add to favorites email to friend print save as pdf

Related Stories

New techniques produce cleanest graphene yet

Oct 31, 2013

Columbia Engineering researchers have experimentally demonstrated for the first time that it is possible to electrically contact an atomically thin two-dimensional (2D) material only along its one-dimensional ...

Recommended for you

Growing app industry has developers racing to keep up

1 hour ago

Smartphone application developers say they are challenged by the glut of apps as well as the need to update their software to keep up with evolving phone technology, making creative pricing strategies essential to finding ...

Review: With Galaxy S5, Samsung proves less can be more

3 hours ago

Samsung Electronics Co. has produced the most formidable rival yet to the iPhone 5S: the Galaxy S5. The device, released over the weekend, is the fifth edition of the company's successful line of Galaxy S ...

User comments : 0

More news stories

Growing app industry has developers racing to keep up

Smartphone application developers say they are challenged by the glut of apps as well as the need to update their software to keep up with evolving phone technology, making creative pricing strategies essential to finding ...

Making graphene in your kitchen

Graphene has been touted as a wonder material—the world's thinnest substance, but super-strong. Now scientists say it is so easy to make you could produce some in your kitchen.