Micron Announces Plans to Produce NAND Flash Memory Products
Boise, ID July 5, 2004 – Micron Technology, Inc., today announced plans to produce NAND Flash memory solutions targeting memory cards, USB devices and other mass storage applications. The growing demand for high-performance, low-cost flash solutions in mobile applications positions NAND Flash as the fastest-growing semiconductor segment in the market. As a leading supplier of semiconductor memory products, Micron is committed to meeting its customers' NAND memory requirements.
Diversification with products including NAND, CellularRAM™ devices, RLDRAM™II devices and CMOS image sensors presents significant opportunities for Micron to leverage its core competencies in DRAM product and process technology. Additionally, NAND compliments Micron’s existing product portfolio and further enables the Company to support customers as a pure semiconductor manufacturer.
“By leveraging our manufacturing prowess, advanced process and product technology, and capital investment, Micron plans to break into the market as one of the top three suppliers,” said Jan du Preez, Micron’s Vice President of Networking and Communication. “Micron is entering the NAND market aggressively, starting with the introduction of our first device on 90nm followed by process migrations to 72nm and then 58nm. Our NAND roadmap reflects multiple configurations and density migrations up to 16Gb. We anticipate ramping production quickly to meet the forecasted market demand.”
By the end of 2004, Micron anticipates bringing its first NAND Flash solution, a 2Gb component, to market. With the Flash card market starting to transition from 128MB to 256MB density NAND as the volume leader, the 2Gb density enables Micron to offer the right NAND Flash density at the right time to meet these core removable storage market requirements.
Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, Flash memory, CMOS image sensors, other semiconductor components and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com.
CellularRAM is a trademark of Micron Technology, Inc., inside the U.S. and a trademark of Infineon Technologies outside the U.S. RLDRAM is a trademark of Infineon Technologies AG in various countries, and is used by Micron Technology, Inc. under license from Infineon.
This press release contains forward-looking statements regarding production of NAND Flash Products in future periods. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents the Company files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically the Company's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for the Company on a consolidated basis to differ materially from those contained in our projections or forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements. We are under no duty to update any of the forward-looking statements after the date of this press release to conform to actual results.
The original press release can be found here.
