World's first MOSFETs with epitaxial Gd2O3

Feb 03, 2006

Researchers at AMICA and Technical University of Darmstadt have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material and bulk silicon with a crystalline gadolinium oxide (Gd2O3) gate dielectric.

In the last years, the semiconductor industry has intensified its search for alternatives to the well known but increasingly limiting SiO2 as transistor gate insulator. While hafnium dioxide is seen as a hot candidate, there is increasing evidence that yet other materials may be needed, such as rare earth oxides. In crystalline form and grown with molecular beam epitaxy (MBE), rare earth oxides provide the promise of engineered interfaces to the silicon channel - with near perfect lattice matching and extremely low defect density.

AMICA researchers have now been able to integrate - for the first time - crystalline gadolinium oxide (Gd2O3) in their experimental SOI CMOS technology platform. The transistors included titanium nitride metal gates and annealing up to 800°C. Researchers at Technical University of Darmstadt have meanwhile used a replacement gate process with chemical mechanical polishing to fabricate MOSFETs with Gd2O3 gate oxide on bulk silicon. These devices are utilized to generate fundamental data for the evaluation of this novel promising material. All films have been grown at partner University of Hannover.

First experimental details will be published in the March/April 2006 edition of the Journal of Vacuum Science & Technology B: "Scalable gate first process for SOI MOSFETs with epitaxial high-k dielectrics" by H.D.B. Gottlob et al.

Source: AMO GmbH

Explore further: Google's new CFO gets $70M for defecting from Morgan Stanley

add to favorites email to friend print save as pdf

Related Stories

Scientists explore mash-up of vacuum tube and MOSFET

Jun 25, 2014

Thumb-size vacuum tubes that amplified signals in radio and television sets in the first half of the 20th century might seem nothing like the metal-oxide semiconductor field-effect transistors (MOSFETs) that ...

Researchers prove stability of wonder material silicene

Aug 12, 2014

An international team of researchers has taken a significant step towards understanding the fundamental properties of the two-dimensional material silicene by showing that it can remain stable in the presence ...

Recommended for you

Wearable device helps vision-impaired avoid collision

2 hours ago

People who have lost some of their peripheral vision, such as those with retinitis pigmentosa, glaucoma, or brain injury that causes half visual field loss, often face mobility challenges and increased likelihood ...

Yahoo boosts share buyback plan by $2 billion

2 hours ago

Yahoo on Thursday told US regulators that it will spend another $2 billion buying back shares as the pioneering US Internet search firm continues an effort to re-invent itself.

Blue Freedom uses power of flowing water to charge

6 hours ago

Good friends may decide to tell you something that is not true but nonetheless sustaining: Nothing is impossible. That was the case of Blue Freedom co-founder who asked his friend if it would be possible ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.