(PhysOrg.com) -- Scientists at the University of Glasgow have developed the world’s smallest diamond transistor.
IMEC showed in collaboration with ASML the potential of double patterning 193nm immersion lithography at 1.2NA for 32nm node Flash and logic.
Researchers from the National Institute of Advanced Industrial Science and Technology (AIST) have demonstrated the operation of a synthetic electric field tunnel field-effect transistor with a new architecture.
A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology ...
IBM scientists have developed a flexible, non-contact microfluidic probe made from silicon can aid researchers and pathologists to investigate critical tissue samples accurately for disease diagnostics and drug discovery.
(PhysOrg.com) -- Scientists at Arizona State University have developed an elegant method for significantly improving the memory capacity of electronic chips.