Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

IRIS beamline at BESSY II gets a new nanospectroscopy end station

The IRIS infrared beamline at the BESSY II storage ring now offers a fourth option for characterizing materials, cells and even molecules on different length scales. The team has extended the IRIS beamline with an end station ...