World's first GaN HEMT T/R module operating in the C-Ku band

Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...

INL, ISU team on nanoparticle production breakthrough

Every hour, the sun floods Earth with more energy than the entire world consumes in a year. Yet solar power accounts for less than 0.002 percent of all electricity generated in the United States, primarily because photovoltaic ...

LG Display will release HD panel for smartphones

(Phys.org) -- LG Display is getting ready to showcase a five-inch smartphone display that turns out to be a full HD LCD panel supporting up to 1080p video, something like having a high-quality TV in your hand. The display ...

New energy-saving flip-flop circuit developed by Toshiba

Toshiba Corporation today announced that it has developed a new flip-flop circuit using 40nm CMOS process that will reduce power consumption in mobile equipment. Measured data verifies that the power dissipation of the new ...

Organic chips - not just in your kitchen anymore

(PhysOrg.com) -- IMEC researchers at the International Solid-State Circuits Conference, in San Francisco, California are expected to introduce a microprocessor made with organic semiconductors.

Researchers develop new transistor concept

Transistors, as used in billions on every computer chip, are nowadays based on semiconductor-type materials, usually silicon. As the demands for computer chips in laptops, tablets and smartphones continue to rise, new possibilities ...

NXP unveils world’s first fully integrated Doherty amplifiers

NXP Semiconductors, the independent semiconductor company founded by Philips, today launched the world's first fully integrated Doherty amplifiers for TD-SCDMA and WCDMA base stations, expanding its extensive portfolio of ...

Development of compact model for tunnel field-effect transistors

Japanese researchers have developed a compact model for circuit simulation to predict the circuit behavior of tunnel field-effect transistors (tunnel FETs). This device-operation model simulates current–voltage characteristics ...

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