Development of compact model for tunnel field-effect transistors

Japanese researchers have developed a compact model for circuit simulation to predict the circuit behavior of tunnel field-effect transistors (tunnel FETs). This device-operation model simulates current–voltage characteristics ...

Mini-camera with maxi-brainpower

Torrential rapids, plunging mud holes and soaring hurdles: in the outdoor competitions at the Olympic Games, athletes pushed themselves to the limit. But it's hard to depict this in pictures alone. This is why researchers ...

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