Accelerating development of STT-MRAM

Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. ...

Modeling crystal behavior—toward answers in self-organization

The electrical and mechanical responses of crystal materials, and the control of their coupled effect, form one of the central themes in material science. They are vital to applications such as ultrasonic generators and non-volatile ...

Oxygen vacancy supported memory

A non-volatile memory keeping its digital information without power and working at the same time at the ultrahigh speed of today's dynamic random access memory (DRAM) – that is the dream of materials scientists of TU Darmstadt.

How much electromagnetic radiation am I exposed to?

A team of researchers from Center for Biomedical Technology (CTB) at Universidad Politécnica de Madrid (UPM) has developed a pocket instrument capable of perceiving radio signals from 50 MHz to 6 GHz and storing this information ...

Human brain inspires computer memory

How is it possible to create computer memory that is both faster and consumes less energy? Researchers at the Institut d'électronique fondamentale (CNRS/Université Paris-Sud) and CEA-List have unlocked the physical mechanisms ...

Memory reformat planned for Opportunity Mars rover

(Phys.org) —An increasing frequency of computer resets on NASA's Mars Exploration Rover Opportunity has prompted the rover team to make plans to reformat the rover's flash memory.

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