Scientists from the University of Lisbon (Portugal) and the University of Stuttgart (Germany) have managed to synthesize and extensively characterize a series of cobalt molecules that exhibit the properties of molecular magnets, ...
Analytical Chemistry
Jul 5, 2022
0
14
Computers normally store and process data in separate modules. But now researchers at ETH Zurich and the Paul Scherrer Institute have developed a method that allows logical operations to be performed directly within a memory ...
Quantum Physics
Jun 16, 2020
0
9
Researchers at the University of Bristol have come up with a new type of nanoelectromechanical relay to enable reliable high-temperature, non-volatile memory.
Nanomaterials
Mar 4, 2020
0
776
Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. ...
Materials Science
Aug 5, 2019
0
5
The electrical and mechanical responses of crystal materials, and the control of their coupled effect, form one of the central themes in material science. They are vital to applications such as ultrasonic generators and non-volatile ...
General Physics
Sep 17, 2018
1
18
A non-volatile memory keeping its digital information without power and working at the same time at the ultrahigh speed of today's dynamic random access memory (DRAM) – that is the dream of materials scientists of TU Darmstadt.
Nanophysics
Jul 12, 2017
0
5
Fujitsu Semiconductor Limited today announced the launch of the 4 Mbit ReRAM MB85AS4MT, the world's largest density mass-produced ReRAM product. This is the first ReRAM product to be jointly developed with Panasonic Semiconductor ...
Electronics & Semiconductors
Oct 27, 2016
0
6
A team of researchers from Center for Biomedical Technology (CTB) at Universidad Politécnica de Madrid (UPM) has developed a pocket instrument capable of perceiving radio signals from 50 MHz to 6 GHz and storing this information ...
Telecom
May 4, 2016
39
17
Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. ...
Condensed Matter
Apr 14, 2016
0
11
Intel and Micron Technology on Tuesday unveiled what they touted as a new kind of memory chip that could "revolutionize" computing devices, services and applications.
Hardware
Jul 28, 2015
10
983
