A device emerges from the fusion of IGZO and ferroelectric-HfO2

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. ...

Adding a carbon atom transforms 2-D semiconducting material

A technique that introduces carbon-hydrogen molecules into a single atomic layer of the semiconducting material tungsten disulfide dramatically changes the electronic properties of the material, according to Penn State researchers ...

Tuning terahertz transmission

The ability to manipulate light on a subwavelength-scale could lead to a revolution in photonic devices such as antennas, solar panels, and even cloaking devices. Nanotechnology advances have made this possible through the ...

New polymer mixture creates ultra-sensitive heat sensor

Scientists at the Laboratory of Organic Electronics have developed an ultra-sensitive heat sensor that is flexible, transparent and printable. The results have potential for a wide range of applications – from wound healing ...

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