A device emerges from the fusion of IGZO and ferroelectric-HfO2

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. ...

Transparent electronics research gains momentum

Transparent electronics are the future, according to researchers including José A. Flores-Livas and Miglė Graužinytė from the research group headed by Stefan Goedecker, Professor of Computational Physics at the University ...

Atomic nitrogen route to new 2-D semiconductors

A simple and non-destructive fabrication technique could aid the manufacture of more energy efficient two-dimensional (2-D) films needed to transform the electronics industry.