Researchers at Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) have developed a simple yet accurate method for finding defects in the latest generation of silicon carbide transistors. This will speed up the process ...
General Physics
Jan 11, 2019
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6
Researchers at the National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor ...
Electronics & Semiconductors
Dec 13, 2018
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4
This week, at the 2018 IEEE International Electron Devices Meeting (IEDM), imec, the world-leading research and innovation hub in nanoelectronics and digital technologies, presents a 300mm-wafer platform for MOSFET devices ...
Electronics & Semiconductors
Dec 3, 2018
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7
When power generators like windmills and solar panels transfer electricity to homes, businesses and the power grid, they lose almost 10 percent of the generated power. To address this problem, scientists are researching new ...
General Physics
Apr 10, 2018
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143
Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity.
Condensed Matter
Oct 26, 2017
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195
(Phys.org) —Researchers from the University of California, Santa Barbara (UCSB) have recently introduced the highest performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs) at the 2014 Symposium ...
Electronics & Semiconductors
Jun 12, 2014
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(Phys.org) —Researchers at Fudan University in China have discovered a way to speed up traditional computer transistors by embedding tunneling field-effect transistors (TFETs) in them. In their paper published in the journal ...
This week at APEC 2013, Toshiba America Electronic Components will introduce a new lineup of high-speed diodes (HSD): the TK16A60W5, TK31J60W5 and TK39J60W5. Based on Toshiba's fourth generation 600V system super junction ...
Electronics & Semiconductors
Mar 19, 2013
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0
STMicroelectronics is revealing innovations in silicon carbide devices at Solar Power International (SPI) 2012 that enable systems producers to build ultra-efficient electronics for converting raw solar energy into grid-quality ...
Electronics & Semiconductors
Sep 11, 2012
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0
NXP Semiconductors today released its new LFPAK33 portfolio – a range of high switching performance MOSFETs available in an ultra-reliable 3.3-mm x 3.3-mm power package. Unlike many MOSFET packages of this size, LFPAK33 ...
Electronics & Semiconductors
Jun 18, 2012
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