Henn Tan could have ruled the global market in what became the ubiquitous USB flash drive that helped consign the floppy disk to the dustbin of technological history.
Hardware
Dec 14, 2010
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Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the ...
Electronics & Semiconductors
Dec 2, 2010
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Scientists at the U.S. Department of Energy’s Argonne National Laboratory have developed a new technique that maps the magnetic vector potential — one of the most important electromagnetic quantities and a foundation ...
General Physics
Sep 29, 2010
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The ability of phase-change materials to readily and swiftly transition between different phases has made them valuable as a low-power source of non-volatile or “flash” memory and data storage. Now an entire new class ...
Nanophysics
Sep 17, 2010
2
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Samsung Electronics and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second ...
Electronics & Semiconductors
Jul 22, 2010
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A team of scientists led by Eugenia Kumacheva of the Department of Chemistry at the University of Toronto has discovered a way to predict the organization of nanoparticles in larger forms by treating them much the same as ...
Bio & Medicine
Jul 12, 2010
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As cell phones and computers continue to shrink, many companies are seeking better ways to store hundreds of gigabytes of data in small, low-power devices.
Condensed Matter
Jun 22, 2010
3
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(PhysOrg.com) -- Using cutting-edge spectroscopy at atomic resolutions, researchers have discovered how to grow ultra-thin manganite films while retaining their magnetic properties.
Nanophysics
Jun 18, 2010
1
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Samsung Electronics today announced availability of an eight gigabit (Gb) OneNAND chip that takes advantage of advanced 30 nanometer (nm) class process technology.
Hardware
May 10, 2010
1
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(PhysOrg.com) -- The memory capacity of electronics devices could be increased in future thanks to an organic data storage system using ternary rather than binary data storage. The current prototype is designed for permanent ...
