Toshiba Corporation today announced that it has developed the world's first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the ...
Electronics & Semiconductors
Apr 24, 2014
0
0
Research into the strange phenomenon known as quantum entanglement - once described as 'spooky' by Albert Einstein - could revolutionise ICT over the coming years, enabling everything from ultra-fast computing to completely ...
Quantum Physics
Sep 19, 2013
1
0
A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology ...
Electronics & Semiconductors
Sep 13, 2013
2
0
A Rice University laboratory pioneering memory devices that use cheap, plentiful silicon oxide to store data has pushed them a step further with chips that show the technology's practicality.
Nanophysics
Jul 9, 2013
2
0
Researchers at the University of Sydney and Dartmouth College have developed a new way to design quantum memory, bringing quantum computers a step closer to reality. The results will appear June 19 in the journal Nature Communications.
Quantum Physics
Jun 19, 2013
3
0
(Phys.org) —Lawrence Livermore researchers for the first time have created movies of irreversible reactions that occur too rapidly to capture with conventional microscopy.
Condensed Matter
Jun 14, 2013
0
0
(Phys.org) —Researchers in Singapore, with assistance from materials scientist Ramamoorthy Ramesh, of the University of California, have succeeded in building a prototype ferroelectric memory device that uses light to read ...
Researchers at MIT have developed a new way of controlling the motion of magnetic domains—the key technology in magnetic memory systems, such as a computer's hard disk. The new approach requires little power to write and ...
Nanophysics
May 30, 2013
4
0
(Phys.org) —Using computer models, a graduate student at the University of Arkansas has collaborated with scientists in the United States and Europe to observe a new magnetic state of bismuth ferrite.
Condensed Matter
May 1, 2013
0
0
IBM today announced a materials science breakthrough at the molecular level that could pave the way for a new class of non-volatile memory and logic chips that would use less power than today's silicon devices like cell phones. ...
Electronics & Semiconductors
Mar 21, 2013
1
0
