Affordable multiferroic material

Toyohashi University of Technology has developed a novel liquid process for fabrication of an affordable multiferroic nanocomposite film in collaboration with Japan Fine Ceramics Center, National Institute of Technology Ibaraki ...

Nylon as a building block for transparent electronic devices?

Scientists at the Max Planck Institute for Polymer Research (MPI-P) led by Dr. Kamal Asadi have solved a four-decade-long challenge of producing very thin nylon films that can be used in electronic memory components, for ...

Nanosized ferroelectrics become a reality

Using ferroelectricity instead of magnetism in computer memory saves energy. If ferroelectric bits were nanosized, this would also save space. But conventional wisdom dictates that ferroelectric properties disappear when ...

The atomic dynamics of rare everlasting electric fields

By ricocheting neutrons off the atoms of yttrium manganite (YMnO3) heated to 3,000 degrees Fahrenheit, researchers have discovered the atomic mechanisms that give the unusual material its rare electromagnetic properties. ...

Room-temperature multiferroic thin films and their properties

Scientists at Tokyo Institute of Technology (Tokyo Tech) and Tohoku University have developed high-quality GFO epitaxial films and systematically investigated their ferroelectric and ferromagnetic properties. They also demonstrated ...

First flexible memory device using oxide ferroelectric material

For the first time, researchers have been able to deposit an ultra-thin oxide ferroelectric film onto a flexible polymer substrate. The research team used the flexible ferroelectric thin films to make non-volatile memory ...

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