Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. ...
Condensed Matter
Apr 14, 2016
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Researchers have developed a fabrication technique for single-crystalline thin-film arrays of an organic ferroelectric small molecules working as a memory device by using a solution process under ambient pressure at room ...
Materials Science
Mar 22, 2016
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Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute ...
Nanophysics
Aug 3, 2015
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The improvements in random access memory that have driven many advances of the digital age owe much to the innovative application of physics and chemistry at the atomic scale.
General Physics
Nov 24, 2014
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The quest for the ultimate memory device for computing may have just taken an encouraging step forward. Researchers at The City College of New York led by chemist Stephen O'Brien have discovered new complex oxides that exhibit ...
Condensed Matter
Sep 17, 2014
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(Phys.org) —Researchers in Singapore, with assistance from materials scientist Ramamoorthy Ramesh, of the University of California, have succeeded in building a prototype ferroelectric memory device that uses light to read ...
Like turning coal to diamond, adding pressure to an electrical material enhances its properties. Now, University of Illinois at Urbana-Champaign researchers have devised a method of making ferroelectric thin films with twice ...
Condensed Matter
Feb 11, 2013
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The electronics industry has a remarkable impact on the environment, yet research is devising new solutions to reduce it. Among these, a new compound with an unutterable name, the diisopropylammonium bromide (DIPAB), a new ...
Materials Science
Jan 28, 2013
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A cheap, flexible organic molecule could replace inorganic crystals as the working parts for memory chips, sensors and energy-harvesting systems.
General Physics
Jan 24, 2013
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Fujitsu Semiconductor today announced the addition of new small package to the MB85RC16, the 16kbit ultra low-power Ferroelectric Random Access Memory (FRAM) device with an I2C interface.
Electronics & Semiconductors
Nov 27, 2012
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