When electric fields make spins swirl

We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for ...

Modeling crystal behavior—toward answers in self-organization

The electrical and mechanical responses of crystal materials, and the control of their coupled effect, form one of the central themes in material science. They are vital to applications such as ultrasonic generators and non-volatile ...

Turning a material upside-down can sometimes make it softer

Through the combined effect of flexoelectricity and piezoelectricity, researchers at the ICN2 led by ICREA Gustau Catalán in collaboration with the UAB have found that polar materials can be made more or less resistant to ...

First flexible memory device using oxide ferroelectric material

For the first time, researchers have been able to deposit an ultra-thin oxide ferroelectric film onto a flexible polymer substrate. The research team used the flexible ferroelectric thin films to make non-volatile memory ...

Doubling data density

An electronic device that could lead to smaller, low-power memory chips can now be controlled and probed by light, as revealed by research from KAUST.

New technique for advanced printed electronics

Researchers have developed a fabrication technique for single-crystalline thin-film arrays of an organic ferroelectric small molecules working as a memory device by using a solution process under ambient pressure at room ...

page 1 from 4