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                    <title>Phys.org - latest science and technology news stories</title>
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            <description>Phys.org internet news portal provides the latest news on science including: Physics, Nanotechnology, Life Sciences, Space Science, Earth Science, Environment, Health and Medicine.</description>

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                    <title>Samsung starts mass producing industry&#039;s first 10-nanometer class DRAM</title>
                    <description>Samsung Electronics announced today that it has begun mass producing the industry&#039;s first 10-nanometer (nm) class, 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. DDR4 is quickly becoming the most widely produced memory for personal computers and IT networks in the world, and Samsung&#039;s latest advancement will help to accelerate the industry-wide shift to advanced DDR4 products.</description>
                    <link>https://phys.org/news/2016-04-samsung-mass-industry-nanometer-class.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Thu, 07 Apr 2016 06:27:41 EDT</pubDate>
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                    <title>Process variation threatens to slow down and even pause chip miniaturization</title>
                    <description>For past several decades, the processor industry has enjoyed the benefits of chip miniaturization and the exponential increase in the number of on-chip transistors as predicted by Moore&#039;s law. However, as process technology scales to small feature sizes, precise control of fabrication processes has become increasingly difficult. As a result, &#039;process variation&#039; (PV), which refers to the deviation in parameters from their nominal specifications, has greatly exacerbated.</description>
                    <link>https://phys.org/news/2016-01-variation-threatens-chip-miniaturization.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 05 Jan 2016 08:01:34 EST</pubDate>
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                    <title>Samsung starts mass production of industry&#039;s first 8 gigabit LPDDR4 mobile DRAM</title>
                    <description>Samsung Electronics announced today that it has started mass producing the industry&#039;s first 8 gigabit (Gb), low power double data rate 4 (LPDDR4) mobile DRAM based on the company&#039;s leading-edge 20-nanometer (nm) process technology. LPDDR memories are the most widely used &quot;working memory&quot; for mobile devices worldwide.</description>
                    <link>https://phys.org/news/2014-12-samsung-mass-production-industry-gigabit.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 23 Dec 2014 10:30:01 EST</pubDate>
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                    <title>Samsung mass produces industry&#039;s first 8-gigabit DDR4 based on 20 nanometer process technology</title>
                    <description>Samsung Electronics announced that it is mass producing the industry&#039;s most advanced 8-gigabit (Gb) DDR4 memory and 32-gigabyte (GB) module, both of which will be manufactured based on a new 20-nanometer (nm) process technology, for use in enterprise servers.</description>
                    <link>https://phys.org/news/2014-10-samsung-mass-industry-gigabit-ddr4.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Wed, 22 Oct 2014 06:30:01 EDT</pubDate>
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                    <title>Samsung mass producing advanced 4Gb DDR3, using 20 nanometer process technology</title>
                    <description>Samsung Electronics today announced that it is mass producing the most advanced DDR3 memory, based on a new 20 nanometer process technology, for use in a wide range of computing applications.</description>
                    <link>https://phys.org/news/2014-03-samsung-mass-advanced-4gb-ddr3.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 11 Mar 2014 10:00:01 EDT</pubDate>
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                    <title>Fujitsu Semiconductor releases Interface Bridge SoC incorporating 10 different interfaces</title>
                    <description>Fujitsu Semiconductor Limited today announced the development of Interface Bridge SoC &quot;MB86E631,&quot; which brings together a dual-core ARM Cortex-A9 processor and a host of different interfaces, all on a single chip. Sample quantities of the new product will begin shipping in late December 2012.</description>
                    <link>https://phys.org/news/2012-10-fujitsu-semiconductor-interface-bridge-soc.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 16 Oct 2012 09:25:52 EDT</pubDate>
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                    <title>Samsung samples industry&#039;s first 16-gigabyte server modules based on DDR4 memory technology</title>
                    <description>Samsung Electronics today announced that it has begun sampling the industry&amp;#146;s first 16-gigabyte (GB) double data rate-4 (DDR4), registered dual inline memory modules (RDIMMs), designed for use in enterprise server systems.</description>
                    <link>https://phys.org/news/2012-07-samsung-samples-industry-gigabyte-server.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 03 Jul 2012 09:10:01 EDT</pubDate>
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                    <title>Samsung now producing industry&#039;s first highest density mobile LPDDR2 memory, using 20nm-class technology</title>
                    <description>Samsung Electronics announced today that it has begun producing the industry&amp;#146;s first four gigabit (Gb), low power double-data-rate 2 (LPDDR2) memory using 20 nanometer (nm) class technology. The mobile DRAM (dynamic random access memory) chip, which went into mass production last month, will help the market to deliver advanced devices that are faster, lighter and provide longer battery life than today&amp;#146;s mobile devices. </description>
                    <link>https://phys.org/news/2012-05-samsung-industry-highest-density-mobile.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Fri, 18 May 2012 08:29:15 EDT</pubDate>
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                    <title>To DDR3: Thanks for the memory but time for DDR4</title>
                    <description>(Phys.org) -- Micron Technology is polishing up its DDR4 memory modules, &amp;#147;sampling&amp;#148; the modules and getting feedback from major customers. The company plans to reach volume production later this year. In brief, Micron is getting ready to bring its DDR4 DRAM modules for market This means the computer industry can expect a new memory standard to make a difference across a range of computing devices, from enterprise computing to so called ultra-thins and tablets. Boise Idaho based Micron this week announced the first piece of its portfolio of DDR4-based modules as the 4-gigabit (Gb) DDR4 x8 part. The announcement said the complete portfolio of DDR4-based modules will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC). </description>
                    <link>https://phys.org/news/2012-05-ddr3-memory-ddr4.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Thu, 10 May 2012 05:40:01 EDT</pubDate>
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                    <title>Elpida starts sample shipments of  next-generation mobile RAM products</title>
                    <description>Elpida Memory, the world&#039;s third largest Dynamic Random Access Memory manufacturer, today announced that it has begun sample shipments of 4-gigabit Wide IO Mobile RAMTM and 4-gigabit DDR3 Mobile RAM (LPDDR3).</description>
                    <link>https://phys.org/news/2011-12-elpida-sample-shipments-next-generation-mobile.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Thu, 29 Dec 2011 06:20:01 EST</pubDate>
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                    <title>Elpida develops 1600 Mbps 4-gigabit DDR3 mobile RAM (LPDDR3)</title>
                    <description>Elpida Memory, Dynamic Random Access Memory (&quot;DRAM&quot;) manufacturer, today announced that it has developed an advanced 30nm process 4-gigabit DDR3 Mobile RAMTM (LPDDR3). The new chip can achieve a high-speed data transfer rate of 1600Mbps at low operating voltage of 1.2V. </description>
                    <link>https://phys.org/news/2011-11-elpida-mbps-gigabit-ddr3-mobile.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Thu, 24 Nov 2011 08:10:01 EST</pubDate>
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                    <title>Elpida develops next-generation mobile DRAM product</title>
                    <description>Elpida Memory, the third largest Dynamic Random Access Memory (DRAM) manufacturer in the world, today announced that it had developed the industry&#039;s first 4-gigabit next-generation mobile memory chips for smart phones, tablet PCs and other mobile devices. The new DRAM achieves compliance with the cutting-edge &quot;Wide IO&quot; international standard for mobile memory and has a data transfer rate that is four times faster than current mobile memory chips. Hence, it supports dramatic improvement in video and audio functionality.</description>
                    <link>https://phys.org/news/2011-11-elpida-next-generation-mobile-dram-product.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Fri, 18 Nov 2011 11:35:36 EST</pubDate>
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                    <title>Elpida develops industry&#039;s first 25nm process 4-gigabit DDR3 SDRAM</title>
                    <description>Elpida Memory today announced it had completed development of the industry&#039;s first 25-nanometer (nm) process 4-gigabit DDR3 SDRAM. The new chip is also the smallest 4-gigabit DRAM. The new cutting-edge smallest available 4-gigabit chip uses ultra fine-width 25nm process migration technology. Back in May, Elpida finished development of a 2-gigabit DDR3 SDRAM using the advanced 25nm process and began sample shipments in July.</description>
                    <link>https://phys.org/news/2011-09-elpida-industry-25nm-gigabit-ddr3.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Fri, 23 Sep 2011 10:44:26 EDT</pubDate>
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                    <title>Samsung NC215 solar netbook arrives in Korea</title>
                    <description>(PhysOrg.com) -- Samsung has released the NC215 solar-powered netbook in Korea. The netbook carries a solar panel on the lid, which can turn two hours of sunlight into one hour of netbook run-time.</description>
                    <link>https://phys.org/news/2011-08-samsung-nc215-solar-netbook-korea.html</link>
                    <category>Consumer &amp; Gadgets</category>                    <pubDate>Wed, 24 Aug 2011 14:16:17 EDT</pubDate>
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                    <title>Samsung develops 30nm-class 32GB green DDR3 for next-generation servers</title>
                    <description>Samsung Electronics today announced the development of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology.</description>
                    <link>https://phys.org/news/2011-08-samsung-30nm-class-32gb-green-ddr3.html</link>
                    <category>Hardware</category>                    <pubDate>Thu, 18 Aug 2011 06:18:16 EDT</pubDate>
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                    <title>Elpida begins sample shipments of DDR3 SDRAM (x32) based on TSV stacking technology</title>
                    <description>Elpida Memory today announced that it has begun sample shipments of the industry&#039;s first DDR3 SDRAM (x32-bit I/O configuration) made using TSV (Through Silicon Via) stacking technology. The sample is a low-power 8-gigabit (1-gigabyte) DDR3 SDRAM assembled in a single package that consists of four 2-gigabit DDR3 SDRAMs fitted to a single interface chip using TSV.</description>
                    <link>https://phys.org/news/2011-06-elpida-sample-shipments-ddr3-sdram.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 28 Jun 2011 13:39:24 EDT</pubDate>
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                    <title>Imerj and Frog show off a hybrid smartphone and tablet PC</title>
                    <description>(PhysOrg.com) -- When you picture a hybrid Smartphone/ tablet PC do you think of a device that looks stunningly like a Nintendo DSi? If so then your mental picture matches the one from the design team at Imerj and Frog. They just released the information on their new hybrid machine and aside from its oddly familiar form factor it comes complete with some nice specs. </description>
                    <link>https://phys.org/news/2011-06-imerj-frog-hybrid-smartphone-tablet.html</link>
                    <category>Consumer &amp; Gadgets</category>                    <pubDate>Fri, 24 Jun 2011 15:30:01 EDT</pubDate>
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                    <title>Samsung begins mass producing 30nm-class, 32-gigabyte memory modules for green IT systems</title>
                    <description>Samsung Electronics today announced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules, essential for cloud computing and advanced server systems, using 30 nanometer (nm) class four gigabit (Gb) DDR3 DRAM chips.</description>
                    <link>https://phys.org/news/2011-05-samsung-mass-30nm-class-gigabyte-memory.html</link>
                    <category>Hardware</category>                    <pubDate>Tue, 31 May 2011 08:30:40 EDT</pubDate>
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                    <title>Elpida develops industry&#039;s first 25nm process DRAM</title>
                    <description>Elpida Memory, Japan&#039;s leading global supplier of Dynamic Random Access Memory (DRAM), today announced it had developed a 2-gigabit DDR3 SDRAM using an industry-leading 25nm process for memory manufacturing. Using the most advanced process technology available Elpida has achieved the industry&#039;s smallest chip size for a 2-gigabit SDRAM.</description>
                    <link>https://phys.org/news/2011-05-elpida-industry-25nm-dram.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Mon, 02 May 2011 13:15:25 EDT</pubDate>
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                    <title>Using 30nm class technology, Samsung develops industry&#039;s first DDR4DRAM</title>
                    <description>Samsung Electronics announced today that it completed development of the industry&amp;#146;s first DDR4 DRAMmodule last month, using 30 nanometer (nm) class process technology.</description>
                    <link>https://phys.org/news/2011-01-30nm-class-technology-samsung-industry.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Thu, 06 Jan 2011 11:17:31 EST</pubDate>
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                    <title>Sample shipments of 30nm process 4-Gigabyte DDR3 SO-DIMM out by Elpida</title>
                    <description>Elpida Memory, Japan&#039;s leading global supplier of Dynamic Random Access Memory (DRAM), today announced it has begun sample shipments of its newly developed 30nm process 4-gigabyte DDR3 SO-DIMM. The new memory module was built using currently available advanced 30nm process DRAM manufacturing technology and is composed of sixteen 2-gigabit DDR3 SDRAMs. It achieves a high density of 4 gigabytes.</description>
                    <link>https://phys.org/news/2010-12-sample-shipments-30nm-gigabyte-ddr3.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 21 Dec 2010 11:11:15 EST</pubDate>
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                    <title>Samsung readies green memory with advanced chip stacking technology</title>
                    <description>Samsung Electronics today announced the development of an eight gigabyte registered dual inline memory module based on its advanced Green DDR3 DRAM. The new memory module, which has just been successfully tested by major Samsung customers, delivers superior performance, in particular because of its use of a three-dimensional (3D) chip stacking technology referred to as &#039;through silicon via&#039; (TSV).</description>
                    <link>https://phys.org/news/2010-12-samsung-readies-green-memory-advanced.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Wed, 08 Dec 2010 13:14:58 EST</pubDate>
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                    <title>Elpida develops industry&#039;s smallest 30nm process 2-Gigabit DDR3 SDRAM</title>
                    <description>Elpida Memory, Inc., Japan&#039;s global supplier of Dynamic Random Access Memory (DRAM), today announced that it had completed development of a 30nm process 2-gigabit DDR3 SDRAM.</description>
                    <link>https://phys.org/news/2010-09-elpida-industry-smallest-30nm-gigabit.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Wed, 29 Sep 2010 09:59:56 EDT</pubDate>
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                    <title>ASUS introduces the Eee PC 1015PEM dual core netbook</title>
                    <description>ASUS today announces the launch of the Eee PC 1015PEM with the latest Intel Atom N550 dual core processor. This processor gives the 1015PEM a level of performance that surpasses other Atom-based netbooks available today.</description>
                    <link>https://phys.org/news/2010-09-asus-eee-pc-1015pem-dual.html</link>
                    <category>Consumer &amp; Gadgets</category>                    <pubDate>Mon, 13 Sep 2010 07:01:20 EDT</pubDate>
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                    <title>Fujitsu&#039;s DDR3 DIMM Connector Design Enhances Memory Module Reliability</title>
                    <description>Fujitsu today released a DDR3 (Double Data Rate) DIMM (Dual Inline Memory Module) socket connector designed to reduce errors and intermittent faults associated with DDR3 memory modules. </description>
                    <link>https://phys.org/news/2010-08-fujitsu-ddr3-dimm-connector-memory.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Tue, 03 Aug 2010 16:40:40 EDT</pubDate>
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                    <title>Samsung to Introduce 32-Gigabyte Performance-enhancing Memory Module for Servers</title>
                    <description>Samsung Electronics announced today that it has developed the industry&#039;s first 32 gigabyte (GB) load-reduced, dual-inline memory module (LRDIMM), for server applications.</description>
                    <link>https://phys.org/news/2010-06-samsung-gigabyte-performance-enhancing-memory-module.html</link>
                    <category>Hardware</category>                    <pubDate>Wed, 30 Jun 2010 10:00:01 EDT</pubDate>
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                    <title>Computex: Intel Outlines Atom Processor Plans, Products</title>
                    <description>At Computex today, Intel unveiled new products and features based on its low-power Intel Atom processor family, including plans to further differentiate the popular netbook category and expand into several new market segments beyond its growing PC, laptop and server businesses.</description>
                    <link>https://phys.org/news/2010-06-computex-intel-outlines-atom-processor.html</link>
                    <category>Hardware</category>                    <pubDate>Tue, 01 Jun 2010 17:40:03 EDT</pubDate>
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                    <title>ASUS Enables World&#039;s Fastest-Clocked Memory</title>
                    <description>The joint efforts of ASUS and G.Skill have resulted in record-breaking performance out of brand new dual-channel DDR3 memory, reaching amazing frequencies of 2.5GHz.</description>
                    <link>https://phys.org/news/2010-05-asus-enables-world-fastest-clocked-memory.html</link>
                    <category>Hardware</category>                    <pubDate>Tue, 04 May 2010 17:14:57 EDT</pubDate>
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                    <title>Elpida Completes Development of 4-Gigabit DDR3 SDRAM,  Industry&#039;s Highest Density DDR3</title>
                    <description>Elpida Memory, Japan&#039;s leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it had completed development of a 4-gigabit DDR3 SDRAM, the highest density DDR3 DRAM in the DRAM industry.</description>
                    <link>https://phys.org/news/2010-04-elpida-gigabit-ddr3-sdram-industry.html</link>
                    <category>Electronics &amp; Semiconductors</category>                    <pubDate>Fri, 23 Apr 2010 13:50:02 EDT</pubDate>
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                    <title>Samsung Ships 40nm-class, 32-Gigabyte Memory Module for Server Applications</title>
                    <description>Samsung Electronics announced today that it has begun shipping samples of the industry’s highest-density memory module for server systems. The 32 gigabyte (GB) module has been designed for use in advanced servers, which require high-density and high-performance features at low-power consumption levels. </description>
                    <link>https://phys.org/news/2010-03-samsung-ships-40nm-class-gigabyte-memory.html</link>
                    <category>Hardware</category>                    <pubDate>Mon, 29 Mar 2010 08:30:01 EDT</pubDate>
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