Hynix, Toshiba to develop new STT-MRAM memory deviceJuly 13, 2011 in Technology / Semiconductors
South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.
The companies said in a statement that the tie-up to develop spin-transfer torque magnetoresistance random access memory (STT-MRAM) technology -- for use in devices such as smartphones -- would help them minimise risk.
Toshiba recognises MRAM as an important next-generation memory technology that could sustain future growth in its semiconductor business, the statement said.
The two companies intend to set up a joint production venture once the technology has been successfully developed, it said.
Hynix CEO Kwon Oh-Chul described MRAM as "a perfect fit" for growing consumer demand for more sophisticated smartphones.
"MRAM is a rare gem full of exciting properties, like ultra high-speed, low-power consumption, and high capacity, and it will play the role of key factor in driving advances in memories," he said.
The two companies said they have also extended a patent cross-licensing and product supply agreements reached in 2007.
(c) 2011 AFP
"Hynix, Toshiba to develop new STT-MRAM memory device" July 13, 2011 https://phys.org/news/2011-07-hynix-toshiba-memory-device.html