Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, today announced that it has developed a 4Gb OneNAND Flash memory device for multimedia phones, featuring micro-compact dimensions, low power consumption and high performance, in addition to its high density.
OneNAND is expected to be especially popular as the memory device powering tiny 3G mobile phones, advanced PDAs, a new generation of portable gaming systems and the highest performing digital cameras. The new OneNAND memory device operates on 1.8V, reducing power consumption to nearly half of the existing 3.3V level for other types of mobile memory. It also features a micro-compact size (1 1 x13x1. 4 mm), considerably smaller than mobile memory of the same capacity.
“In addition to recently announced advances in next-generation mobile DRAM and multi-chip package (MCP) memory, the new 4Gb OneNAND will help to solidify our leadership position in the rapidly expanding mobile convergence market,” said Tom Quinn, senior vice president of sales and marketing for Samsung Semiconductor.
The 4Gb OneNAND boasts a sustained data read speed of 108 MByte/s, four times faster than conventional NAND Flash memory, and a write speed of 10 MByte/s, more than 60 times faster than NOR flash memory . It can store 2 5 0 - more - sequential photographs from a 5-megapixel camera phone, or up to 1 2 0 music files.
Samsung Electronics has a wide product range of OneNAND Flash memory sizes, from 1 28 M b to 4Gb with software that will optimize it for virtually all popular mobile operating systems, including Symbian and Linux.
The 4Gb OneNAND memory is a quad die package (QDP) developed by stacking four 1Gbit OneNAND memory chips in a 90 nanometer production process developed last November.
A ccording to market researcher iSuppli, the 3G mobile handset market will reach 240 million handsets in annual sales by 2008, recording a massive annual growth rate of 8 7% from 2004.
The company said it will begin mass producing its new 4Gb OneNAND Flash in July .
