Professor XiZhang WANG, from the Key Laboratory of Mesoscopic Chemistry, MOE of Nanjing University, and his collaborators have developed a simple and effective way to reduce VT and improve the mobility of pentacene TFTs with the commonly-used SiO2 substrate by inserting a thin metal phthalocyanine (MPc) interlayer (of only ca. 2 nm) between the Au source/drain electrodes and the pentacene active layer. In this case, VT decreased remarkably from ca. -20 V to a few volts (below -7.6 V), while the mobility increased 1.5 times after the insertion of the interlayer. The performance enhancement could be attributed to the reduction of the carrier-injection barrier between the Au source/drain electrodes and the pentacene active layer due to the involvement of the MPc interlayer. This work, entitled "Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanine interlayer", was published in SCIENCE CHINA Technological Sciences.2012, Vol 55(2). This report suggests a simple and effective way to fabricate low-threshold-voltage pentacene TFTs with high mobility on SiO2 dielectric substrates, which should be helpful for promoting their use in practical applications.
Li Y, Liu Q, Wang XZ, et al. Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanine interlayer. SCI CHINA Tech Sci, 2012, 55(2): 417
Provided by Science in China Press
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