A research to find the optimum conditions for the growth of GaN nanowires

ICREA Research Professor and Group Leader Jordi Arbiol and his team have recently moved to the ICN2. They have already signed a Nanoletters paper with their new affiliation where they have collaborated in the study, under different conditions, of the growth of nanowires and nanotubes of GaN using a technique called Selective Area Growth.

Institut Català de Nanociència i Nanotecnologia (ICN2) is a growing institute consolidating his role as a leading nanoscience and nanotechnology focus in Southern Europe. One new step of this process is the incorporation of the ICREA Research Professor Jordi Arbiol and the Group of Advanced Electron Nanoscopy, now working under the affiliation of our Institute. The aim of the Group is developing and applying Electron Nanometrology tools, such as Transmission Electron Nanoscopy advanced techniques and related spectroscopies for Nanotechnology and Materials Science needs. They are able to observe optic properties of mater atom by atom and chemically analyse nanostructures at the atomic scale.

Prof Arbiol and his team have already signed a contribution in a Nanoletters paper with their new affiliation. The article, entitled Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy, studies under different conditions the growth of nanowires and nanotubes of GaN using a technique called Selective Area Growth. The work was led from the Technische Universität München(Germany), with Prof Jose A. Garrido among its authors.

The aim of this research is to find the optimum conditions for the growth of GaN nanowires. This means obtaining nanostructures with the best characteristics for developing applications. For instance, the position control of these structures on diamond is strongly desired for quantum computation.

Provided by Catalan Institute of Nanoscience and Nanotechnology