Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

Researchers improve magnets for computing

As demand rises for increased data storage and faster-performing computers, researchers are creating a new generation of materials to meet consumers' expectations.

New material shows promise for next-generation memory technology

Phase change memory is a type of nonvolatile memory that harnesses a phase change material's (PCM) ability to shift from an amorphous state, i.e., where atoms are disorganized, to a crystalline state, i.e., where atoms are ...

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