News tagged with static random access memory
Fujitsu and SuVolta demonstrate ultra-low-voltage operation of SRAM down to 0.4V
Fujitsu Semiconductor Limited and SuVolta, Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating ...
Dec 07, 2011 |
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Extremely fast MRAM data storage within reach
Magnetic Random Access Memories (MRAM) are the most important new modules on the market of computer storage devices. Like the well known USB-sticks, they store information into static memory, but MRAM offer ...
Mar 08, 2011 |
4.5 / 5 (15) |
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SKorea clears chipmakers of cartel charges
South Korea's anti-trust watchdog said Monday it has found no evidence that leading chipmakers in South Korea and other countries colluded to fix prices.
Apr 20, 2009 |
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Search results for static random access memory
First patent on low density parity check coding with soft decision decoding for spin-torque transfer MRAM
Researchers at the A*STAR, Data Storage Institute (DSI), have filed a patent on low-density parity-check (LDPC) coding with soft decision decoding, which is an advanced error correction coding scheme for spin-torque transfer ...
Mar 14, 2012 |
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Low power, programmable cell array demonstrated by NEC
NEC Corporation announced today the successful demonstration of a low power programmable cell array using a rewritable and nonvolatile solid-electrolyte switch, "NanoBridge," integrated into a 90nm CMOS.
Feb 22, 2011 |
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UCLA receives grant for ongoing research on high-speed, high-density computer memory
A team of researchers at UCLA's Henry Samueli School of Engineering and Applied Science has been awarded $5.5 million for ongoing efforts to develop technology they expect will lead to computers and other devices that use ...
Dec 10, 2010 |
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New chip technology makes way for exploding number of internet users
IBM announced a new chip-making technology that can be used to create advanced semiconductors that can keep pace with the exploding number of internet-connected devices and the tidal wave of data they are ...
Nov 10, 2010 |
4.7 / 5 (9) |
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Magnetic vortex memory shows memory potential of nanodots
(PhysOrg.com) -- Using magnetic nanodots in the vortex state, researchers have designed a new kind of non-volatile memory that could offer increased speed and density for next-generation non-volatile random ...
Apr 21, 2010 |
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Toshiba Develops SRAM Circuit Technique that Secures Low Voltage Operation of System LSI
Toshiba Corporation today announced that it has developed a breakthrough technology that achieves low voltage operation of System LSI, opening the way to reduced power consumption in digital products. The ...
Feb 08, 2010 |
3 / 5 (3) |
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Review: $99 WikiReader is a pocket encyclopedia
(AP) -- When I was a kid, my dad bought a copy of the Encyclopedia Britannica. It had 32 volumes and took up 4 feet in the book case. I loved to sit on the couch and flip through it, reading articles at random.
Electronics / Consumer & Gadgets
Oct 28, 2009 |
4 / 5 (2) |
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Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate
Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that ...
Dec 17, 2008 |
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Miniaturizing memory: Taking data storage to the molecular level
Computers are getting smaller and smaller. And as hand-held devices — from mobile phones and cameras to music players and laptops — get more powerful, the race is on to develop memory formats that can satisfy the ever-growing ...
Nov 11, 2008 |
3.9 / 5 (9) |
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New Speed Record for Magnetic Memories
(PhysOrg.com) -- An experiment carried out at the Physikalisch-Technische Bundesanstalt (PTB) has realized spin torque switching of a nanomagnet as fast as the fundamental speed limit allows. Using this so-called ballistic ...
Aug 18, 2008 |
4.6 / 5 (22) |
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List of search results for static random access memory
