TSMC Achieves 28nm SRAM Yield Breakthrough
Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
Electronics & Semiconductors
Aug 24, 2009
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Fujitsu Semiconductor Limited announced the development of the MB85R4M2T, a 4 Mbit FRAM chip with an SRAM-compatible parallel interface. The new product will be made available in sample quantities starting January 2014. It ...
Electronics & Semiconductors
Nov 13, 2013
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European scientists from both academia and industry have begun an ambitious new research project focused on an alternative approach to extend Moore's Law. The goal is to reduce costs and improve the energy efficiency of electronic ...
Electronics & Semiconductors
Feb 4, 2014
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Fujitsu Semiconductor today announced the development of two new FRAM products, MB85RS1MT and MB85RS2MT, which feature 1 Mbit and 2 Mbit of memory, respectively, making them the largest density serial-interface FRAM products ...
Electronics & Semiconductors
Mar 18, 2013
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