TSMC Achieves 28nm SRAM Yield Breakthrough

Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.

3D-stacked hybrid SRAM cell to be built by European scientists

European scientists from both academia and industry have begun an ambitious new research project focused on an alternative approach to extend Moore's Law. The goal is to reduce costs and improve the energy efficiency of electronic ...

New 1 Mbit and 2 Mbit FRAM products released by Fujitsu

Fujitsu Semiconductor today announced the development of two new FRAM products, MB85RS1MT and MB85RS2MT, which feature 1 Mbit and 2 Mbit of memory, respectively, making them the largest density serial-interface FRAM products ...