News tagged with silicon germanium
With new design, bulk semiconductor proves it can take the heat
The intense interest in harvesting energy from heat sources has led to a renewed push to discover materials that can more efficiently convert heat into electricity. Some researchers are finding those gains ...
Apr 25, 2012 |
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Swiss researchers present breakthrough in semiconductor structuring
(PhysOrg.com) -- ETH Zurich physicists, in collaboration with colleagues at universities in Switzerland and abroad, have made a breakthrough in the manufacture of monolithic semiconductor structures on silicon. ...
Mar 29, 2012 |
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Implant-free quantum-well SiGe pFETs for future high-performance CMOS architectures
Imec announces that it has successfully fabricated implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain. These devices show an excellent short channel control and a record logic performance. ...
Jul 12, 2011 |
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New approach to solar cells
An interdisciplinary team of UC Davis and UC Santa Cruz researchers is taking a novel approach to solar power, one that promises to lead to a technological breakthrough. By using nanoparticles of germanium, ...
Nanotechnology / Nanomaterials
Feb 03, 2011 |
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Panasonic, Imec present new thin film packaged MEMS resonator
Panasonic and imec present at the International Electron Devices Meeting in San Francisco an innovative SiGe (silicon germanium) thin film packaged SOI-based MEMS resonator featuring an industry-record Q factor ...
Dec 07, 2010 |
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Project pioneers use of silicon-germanium for space electronics applications
A five-year project led by the Georgia Institute of Technology has developed a novel approach to space electronics that could change how space vehicles and instruments are designed. The new capabilities are ...
Nov 30, 2010 |
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National Semiconductor Introduces Lowest Noise, Ultra-High-Speed Amplifier
A new ultra-high-speed operational amplifier (op amp) from National Semiconductor Corp. (NYSE: NSM) delivers the industry’s lowest noise (0.69 nV/sqrt Hz) with -3 dB bandwidth of 900 MHz at a gain of 10.
May 19, 2010 |
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NXP to offer 50 RF/Microwave products based on SiGe:C BiCMOS process technology
Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology.
May 13, 2010 |
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First germanium laser brings us closer to 'optical computers'
(PhysOrg.com) -- MIT researchers have demonstrated the first laser built from germanium that can produce wavelengths of light useful for optical communication. It’s also the first germanium laser to operate ...
Feb 04, 2010 |
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New silicon-germanium nanowires could lead to smaller, more powerful electronic devices
(PhysOrg.com) -- Microchip manufacturers have long faced challenges miniaturizing transistors, the key active components in nearly every modern electronic device, which are used to amplify or switch electronic signals.
Dec 09, 2009 |
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Researchers grow nanowire crystals for 3-D microchips
(PhysOrg.com) -- Stanford researchers have developed a method of stacking and purifying crystal layers that may pave the way for three-dimensional microchips.
Aug 26, 2009 |
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Modelling nano-worlds
(PhysOrg.com) -- Modelling the fabrication processes for integrated circuits can slash production development time and costs by up to 40%. But as transistors, already at nano-scales, become ever smaller, researchers are modelling ...
Aug 10, 2009 |
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Toward cheaper imaging systems for identifying concealed weapons on the human body
Electrical engineers from UC San Diego have created high-performance W-Band silicon-germanium (SiGe) radio frequency integrated circuits (RFICs) for passive millimeter-wave imaging. This advance could lead to significantly ...
Jun 09, 2009 |
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