Researchers at the National Institute of Advanced Industrial Science and Technology (AIST), have developed a microelectromechanical systems (MEMS) device fabrication technology that uses only printing and ...
Nov 21, 2012
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MIT researchers find that heat moving in materials called superlattices behaves like waves; finding could enable better thermoelectrics.
Nov 15, 2012
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Japanese researchers have developed a manufacturing technology for highly uniform thin films of organic polymer semiconductors without material losses by applying the semiconductor solution on a highly hydrophobic ...
Nov 15, 2012
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Freescale Semiconductor today announced the new Qorivva MPC5777M multicore microcontroller (MCU), the latest advancement in its extensive Qorivva product line. This advanced MCU family will help automakers worldwide address region ...
Nov 14, 2012
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We can look through glass, but what glass itself looks like on the inside has so far remained a mystery - at least as far as the precise position of the atoms is concerned. Scientists at the Fritz-Haber-Institute ...
Nov 14, 2012
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Semiconductor maker Infineon Technologies AG says it will cut back on investment plans and introduce short-time working as global economic uncertainty weighs on demand and revenue.
Nov 14, 2012
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(Phys.org)—Research at the U.S. Department of Energy Office of Science's Advanced Photon Source (APS) provides new insights about a material that might form the basis for an alternative to conventional ...
Nov 13, 2012
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(Phys.org)—Using the power of the sun and ultrathin films of iron oxide (commonly known as rust), Technion-Israel Institute of Technology researchers have found a novel way to split water molecules into ...
Nov 13, 2012
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National Institute of Advanced Industrial Science and Technology (AIST) researchers have developed a three-dimensional stress analysis simulator for ultra-small silicon (Si) devices. The developed simulation ...
Nov 12, 2012
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Fujitsu Semiconductor today announced that it successfully achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. ...
Nov 08, 2012
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Researchers at Ben-Gurion University of the Negev (BGU) have developed a radically new design for a concentrator solar cell that, when irradiated from the side, generates solar conversion efficiencies which ...
Nov 08, 2012
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When it comes to imaging, every single photon counts if there is barely any available light. This is the point where the latest technologies often reach their limits. Researchers have now developed a diode ...
Nov 07, 2012
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The recently developed ability to measure physical changes in silicon when processed into microelectronic devices could improve fabrication techniques for even smaller circuits.
Nov 07, 2012
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(Phys.org)—Inspired by phenomena common to both earthquakes and atomic force microscopy, University of Wisconsin–Madison materials engineers have learned that chemical reactions between two silicon dioxide surfaces cause ...
Nov 07, 2012
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Imec announces that it has designed and fabricated an electrostatic micro-lens (lenslet) array for KLA-Tencor's anticipated Reflective Electron Beam Lithography (REBL) tool. The REBL technology potentially enables a high ...
Nov 06, 2012
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