News tagged with random access
Novel coding technique patented
Over the past decade, tablet computers and smartphones have taken the world by storm, in no small part due to the way in which they can be switched on almost instantly. The race has been on to develop computers that can similarly ...
Apr 12, 2012 |
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S. Korea's Hynix bids for Japan's Elpida
SK Hynix, the world's second largest microchip maker, said Friday it has submitted a preliminary bid for its struggling Japanese rival Elpida Memory.
Mar 30, 2012 |
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Japan's Elpida to be delisted from Tokyo Stock Exchange
Japan's Elpida Memory, one of the world's top microchip makers, is set to be delisted from the Tokyo Stock Exchange Wednesday in the biggest corporate failure in Japanese manufacturing history.
Mar 27, 2012 |
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First patent on low density parity check coding with soft decision decoding for spin-torque transfer MRAM
Researchers at the A*STAR, Data Storage Institute (DSI), have filed a patent on low-density parity-check (LDPC) coding with soft decision decoding, which is an advanced error correction coding scheme for spin-torque transfer ...
Mar 14, 2012 |
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New Fujitsu V series FRAMs deliver optimal design flexibility
Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...
Mar 05, 2012 |
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Taiwan seeks merger with restructured Elpida
(AP) -- Taiwan's government said Wednesday it would continue to push for the consolidation of the island's memory chip makers with Elpida Memory Inc., two days after the Japanese chipmaker filed for bankruptcy.
Feb 29, 2012 |
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Fujitsu introduces new FRAM product series with extended voltage range
Fujitsu Semiconductor Europe today introduces a new FRAM (Ferroelectric Random Access Memory) product series with an extended voltage range of 3.0V – 5.5V, offering significantly greater design flexibility ...
Feb 14, 2012 |
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Magnetic random-access memory based on new spin transfer technology achieves higher storage density
Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) ...
Feb 02, 2012 |
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S. Korea's Hynix swings to red in Q4 on poor demand
South Korea's Hynix Semiconductor, the world's second-largest maker of memory chips, said Thursday it swung into the red in the fourth quarter as chip prices fell on weak demand for personal computers.
Feb 02, 2012 |
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Elpida Memory develops resistance RAM prototype
Elpida Memory, the world's third largest Dynamic Random Access Memory ("DRAM") manufacturer, today announced the development of its first-ever high-speed non-volatile resistance memory (ReRAM) prototype. As the ReRAM prototype ...
Jan 24, 2012 |
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Seoul approves Samsung's new investment in China
South Korea on Wednesday approved Samsung Electronics' plan to build a new plant in China to produce high-tech memory chips used in tablets and smartphones, the Ministry of Knowledge Economy said.
Jan 04, 2012 |
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1.4 million orders for world's cheapest tablet in India
The world's cheapest tablet computer has clocked 1.4 million bookings since it was put up for sale online two weeks ago in India, a spokeswoman told AFP on Tuesday.
Electronics / Consumer & Gadgets
Jan 03, 2012 |
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Elpida starts sample shipments of next-generation mobile RAM products
Elpida Memory, the world's third largest Dynamic Random Access Memory manufacturer, today announced that it has begun sample shipments of 4-gigabit Wide IO Mobile RAMTM and 4-gigabit DDR3 Mobile RAM (LPDDR3).
Dec 29, 2011 |
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New EU project targets first 100GHz optical RAM silicon chips
A new EU project that aims to develop a 100 gigabits per second (Gbps) optical random access memory (RAM) chip has just kicked off. This chip will be the first of its kind.
Dec 21, 2011 |
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Fujitsu and SuVolta demonstrate ultra-low-voltage operation of SRAM down to 0.4V
Fujitsu Semiconductor Limited and SuVolta, Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating ...
Dec 07, 2011 |
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