News tagged with power amplifier
Lastest graphene research could lead to improvements in bluetooth headsets and other devices
Researchers at the UC Riverside Bourns College of Engineering have built and successfully tested an amplifier made from graphene that could lead to more efficient circuits in electronic chips, such as those ...
Nanotechnology / Nanomaterials
Oct 18, 2010 |
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IMEC develops low-cost low-power 60GHz solutions in digital 45nm CMOS
At this week’s International Solid State Circuits Conference, IMEC presents a 60GHz front-end receive chain, phase-locked loop and power amplifier in 45nm digital CMOS technology. These building blocks pave ...
Feb 09, 2009 |
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World's first GaN HEMT T/R module operating in the C-Ku band
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that ...
Jun 06, 2011 |
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Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band
Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications ...
Oct 06, 2010 |
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Toshiba develops the circuit technique for power efficiency improvement in CMOS power amplifier for mobile phones
Toshiba Corporation today announced that it has developed the world's first circuit technology to remove distortion in wireless transmissions that can be directly integrated into a CMOS radio frequency (RF) power amplifier. ...
Feb 20, 2012 |
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Smaller, cheaper cell phones possible
(PhysOrg.com) -- Ph.D. candidate Sataporn Pornpromlikit played a critical role in research at UC San Diego that made a big impact at a recent conference, and might provide manufacturers with the means for making cell phones ...
Jul 31, 2009 |
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DOCOMO develops compact multi-band power amplifier
NTT DOCOMO today announced that it has developed a prototype power amplifier for six frequency bands between 1.5 GHz and 2.5 GHz in a form factor smaller than multiple single-band power amplifiers conventionally ...
May 20, 2011 |
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NXP brings GaN technology mainstream
At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.
Jun 07, 2011 |
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DOCOMO Develops 8-Band Power Amplifier for Mobile Phones
NTT DOCOMO announced today that it has developed a prototype multi-band power amplifier that accommodates eight frequency bands between 700 MHz and 2.5 GHz, paving the way for lightweight, all-in-one mobile ...
Jan 08, 2010 |
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NXP to offer 50 RF/Microwave products based on SiGe:C BiCMOS process technology
Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology.
May 13, 2010 |
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National Semiconductor Introduces Industry's Lowest-Noise Frequency Synthesizer
National Semiconductor today announced the industry’s lowest-noise, fully integrated frequency synthesizer. The PowerWise LMX2541 provides less than 2 milli-radians (mrad) root-mean-square (rms) noise at 2.1 ...
Jul 06, 2009 |
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NXP unveils world’s first fully integrated Doherty amplifiers
NXP Semiconductors, the independent semiconductor company founded by Philips, today launched the world's first fully integrated Doherty amplifiers for TD-SCDMA and WCDMA base stations, expanding its extensive portfolio of ...
Jan 27, 2009 |
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