NXP brings GaN technology mainstream
At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.
Electronics & Semiconductors
Jun 7, 2011
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News tagged with power amplifier
World's first GaN HEMT T/R module operating in the C-Ku band
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...
Electronics & Semiconductors
Jun 6, 2011
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DOCOMO develops compact multi-band power amplifier
NTT DOCOMO today announced that it has developed a prototype power amplifier for six frequency bands between 1.5 GHz and 2.5 GHz in a form factor smaller than multiple single-band power amplifiers conventionally used to provide ...
Electronics & Semiconductors
May 20, 2011
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Lastest graphene research could lead to improvements in bluetooth headsets and other devices
Researchers at the UC Riverside Bourns College of Engineering have built and successfully tested an amplifier made from graphene that could lead to more efficient circuits in electronic chips, such as those used in Bluetooth ...
Nanomaterials
Oct 18, 2010
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Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band
Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in ...
Electronics & Semiconductors
Oct 6, 2010
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NXP to offer 50 RF/Microwave products based on SiGe:C BiCMOS process technology
Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology.
Electronics & Semiconductors
May 13, 2010
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DOCOMO Develops 8-Band Power Amplifier for Mobile Phones
NTT DOCOMO announced today that it has developed a prototype multi-band power amplifier that accommodates eight frequency bands between 700 MHz and 2.5 GHz, paving the way for lightweight, all-in-one mobile phones capable ...
Electronics & Semiconductors
Jan 8, 2010
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Smaller, cheaper cell phones possible
(PhysOrg.com) -- Ph.D. candidate Sataporn Pornpromlikit played a critical role in research at UC San Diego that made a big impact at a recent conference, and might provide manufacturers with the means for making cell phones ...
Electronics & Semiconductors
Jul 31, 2009
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National Semiconductor Introduces Industry's Lowest-Noise Frequency Synthesizer
National Semiconductor today announced the industry’s lowest-noise, fully integrated frequency synthesizer. The PowerWise LMX2541 provides less than 2 milli-radians (mrad) root-mean-square (rms) noise at 2.1 GHz and 3.5 ...
Electronics & Semiconductors
Jul 6, 2009
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IMEC develops low-cost low-power 60GHz solutions in digital 45nm CMOS
At this week’s International Solid State Circuits Conference, IMEC presents a 60GHz front-end receive chain, phase-locked loop and power amplifier in 45nm digital CMOS technology. These building blocks pave the way to ...
Electronics & Semiconductors
Feb 9, 2009
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