News tagged with pmos transistor
Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS ...
Dec 09, 2009 |
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Search results for pmos transistor
New energy-saving flip-flop circuit developed by Toshiba
Toshiba Corporation today announced that it has developed a new flip-flop circuit using 40nm CMOS process that will reduce power consumption in mobile equipment. Measured data verifies that the power dissipation ...
Feb 21, 2011 |
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Fujitsu Develops Power-Saving CMOS Technology for 32nm-Generation and Beyond
(PhysOrg.com) -- Fujitsu Laboratories announced today the development of power-saving CMOS technology for logic LSI chips for 32 nanometer- (32nm-) generation and beyond. The new technology enables employment ...
Dec 16, 2008 |
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Fujitsu Develops Low-power CMOS Technology For 32nm Generation
Fujitsu today announced the development of low-power CMOS technology for 32nm-generation logic LSIs, which makes it possible to minimize the number of necessary manufacturing processes for LSIs, and without ...
Jun 17, 2008 |
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Breaking the performance barrier of 22-nm CMOS technology
A major initiative has been launched in Europe with a top-ranked project called DUALLOGIC, Dual channel CMOS for (sub)-22 nm high performance logic.
Feb 19, 2008 |
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Sematech Reveals Details on Practical High-K Metal Gate Systems for 45nm And Beyond
Building on their successful CMOS solution for gate‑first, thermally stable, high-k dual metal gates, SEMATECH researchers have released further data that portends a new era in which future transistor scaling is dominated ...
Aug 20, 2007 |
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IMEC demonstrates viability of laser anneal for the 32nm node
At today’s IEEE International Electron Devices Meeting, IMEC reports that laser anneal is a promising option for further transistor scaling to the 32nm node. By device demonstration, IMEC shows that laser anneal allows to ...
Dec 11, 2006 |
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IMEC to create solutions for sub-45nm CMOS scaling
Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...
Jun 17, 2005 |
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UMC's Researchers Extend Traditional Nitrided Gate-oxide to beyond the 65nm node
Nitrogen profile engineering used to downscale effective oxide thickness towards 1nm to improve semiconductor performance UMC, a world leading semiconductor foundry, today announced that its research and development team ...
Jun 16, 2005 |
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NEC Develops Highly-Reliable CMOSFET with Phase Controlled NiSi (NFET) & Ni3Si (PFET) Gate Electrode
NEC Corporation ("NEC") today announced the development of a transistor featuring a new gate stack structure using a hafnium ("Hf")-based, high-k dielectric and a metal gate electrode, which simultaneously realize significant ...
Jun 16, 2005 |
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TI Delivers Industry's First Wireless Digital Baseband Processor on Advanced 65-nm Process
Texas Instruments Incorporated (TI) (NYSE: TXN) announced it is delivering fully functional wireless digital baseband devices from its advanced 65-nanometer (nm) CMOS process technology. The announcement fulfills TI's commitment ...
Mar 09, 2005 |
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