Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, ...
Electronics & Semiconductors
May 13, 2011
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(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...
Electronics & Semiconductors
Apr 21, 2011
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Intel and Micron Technology today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, ...
Electronics & Semiconductors
Apr 15, 2011
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Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management into the NAND package. ...
Electronics & Semiconductors
Apr 6, 2011
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SanDisk Corporation, the global leader in flash memory cards, today announced its next generation of iNAND and iNAND Ultra embedded flash drives featuring smaller and thinner form factors. Available in packages as small as ...
Hardware
Feb 14, 2011
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Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the ...
Electronics & Semiconductors
Dec 2, 2010
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Samsung Electronics announced today the industry’s first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can be used in high-density ...
Hardware
Oct 13, 2010
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Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping ...
Electronics & Semiconductors
Sep 2, 2010
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(PhysOrg.com) -- Lyric Semiconductor has unveiled a new type of chip that uses probability inputs and outputs instead of the conventional 1's and 0's used in logic chips today. Crunching probabilities is much more applicable ...
Samsung Electronics and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second ...
Electronics & Semiconductors
Jul 22, 2010
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