If a research team in Japan gets its wish, "normally off" computers may one day soon be replacing present computers in a move that would both eliminate volatile memory, which requires power to maintain stored data, and reduce ...
General Physics
Apr 8, 2014
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A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering has developed a new Magnetoresistive Random Access Memory (MRAM) technology ...
Electronics & Semiconductors
Dec 30, 2013
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Toshiba Corporation today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest power consumption ...
Electronics & Semiconductors
Dec 13, 2012
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Computers often do not run as fast as they should because they are constantly transferring information between two kinds of memory: a fast, volatile memory connected to the CPU, and a slow, non-volatile memory that remembers ...
Condensed Matter
Aug 2, 2012
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(Phys.org) -- Japan-based storage experts, Buffalo, has introduced a new line of solid state drives (SSDs) that use MRAM cache (instead of standard SDRAM). The company’s new line of solid state drives went on show this ...
Over the past decade, tablet computers and smartphones have taken the world by storm, in no small part due to the way in which they can be switched on almost instantly. The race has been on to develop computers that can similarly ...
Engineering
Apr 12, 2012
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Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of ...
General Physics
Feb 2, 2012
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(PhysOrg.com) -- Researchers from the National Institute of Standards and Technology (NIST) and University of Colorado Boulder (CU) have developed a low-power microchip that uses a combination of microfluidics and magnetic ...
General Physics
Oct 14, 2011
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South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.
Electronics & Semiconductors
Jul 13, 2011
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Fujitsu Laboratories and the University of Toronto today announced that they have jointly developed the world's first high-reliability read-method for use with spin-torque-transfer (STT) MRAM that is insusceptible to erroneous ...
Electronics & Semiconductors
Feb 12, 2010
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