Ultrafast optical-magnetic memory device

Magnetic random-access memory (MRAM) technology offers substantial potential towards next-generation universal memory architecture. However, state-of-the-art MRAMs are still fundamentally constrained by a sub-nanosecond speed ...

Scientists take a 'spin' onto magnetoresistive RAM

Magnetoresistive random access memory (MRAM) is the top candidate for next-generation digital technology. However, manipulating MRAM efficiently and effectively is challenging. An interdisciplinary research team based at ...

Accelerating development of STT-MRAM

Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. ...

A new multi-bit 'spin' for MRAM storage

Interest in magnetic random access memory (MRAM) is escalating, thanks to demand for fast, low-cost, nonvolatile, low-consumption, secure memory devices. MRAM, which relies on manipulating the magnetization of materials for ...

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