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News tagged with mram

Buffalo shows SSDs with MRAM at Japan show

(Phys.org) -- Japan-based storage experts, Buffalo, has introduced a new line of solid state drives (SSDs) that use MRAM cache (instead of standard SDRAM). The company’s new line of solid state drives ...

Electronics / Hardware

created May 15, 2012 | popularity 4.4 / 5 (7) | comments 5 | with audio podcast report

Novel coding technique patented

Over the past decade, tablet computers and smartphones have taken the world by storm, in no small part due to the way in which they can be switched on almost instantly. The race has been on to develop computers that can similarly ...

Technology / Engineering

created Apr 12, 2012 | popularity not rated yet | comments 1

Magnetic random-access memory based on new spin transfer technology achieves higher storage density

Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) ...

Physics / General Physics

created Feb 02, 2012 | popularity 4.5 / 5 (2) | comments 1

Magnetic attraction: NIST microchip demonstrates concept of 'MRAM for biomolecules'

(PhysOrg.com) -- Researchers from the National Institute of Standards and Technology (NIST) and University of Colorado Boulder (CU) have developed a low-power microchip that uses a combination of microfluidics ...

Physics / General Physics

created Oct 14, 2011 | popularity 5 / 5 (1) | comments 0 | with audio podcast

Hynix, Toshiba to develop new STT-MRAM memory device

South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.

Technology / Semiconductors

created Jul 13, 2011 | popularity not rated yet | comments 0

High-Reliability Read-Method for Spin-Torque-Transfer MRAM, Next-Generation Non-Volatile Memory

Fujitsu Laboratories and the University of Toronto today announced that they have jointly developed the world's first high-reliability read-method for use with spin-torque-transfer (STT) MRAM that is insusceptible ...

Technology / Semiconductors

created Feb 12, 2010 | popularity 4 / 5 (4) | comments 2