News tagged with mosfet
Toshiba announces next-generation superjunction technology for power MOSFETs
Toshiba America Electronic Components (TAEC) today announced its DTMOS-IV process, a new-generation of superjunction (SJ) technology for power MOSFETs. Products based on the DTMOS-IV technology will make ...
May 10, 2012 |
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Toshiba expands family of high-speed, low-voltage MOSFETs with new 60V and 120V devices
Toshiba America Electronic Components (TAEC) today announced that it has expanded its family of low-voltage, high-speed MOSFETs with new, ultra-efficient 60V and 120V devices that will save space and reduce ...
May 10, 2012 |
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Toshiba announces family of ultra-efficient, high-speed, low voltage MOSFETs
Toshiba today announced a new family of ultra-high-efficiency, high-speed MOSFETs that deliver significant improvements in trade-off characteristics between low on resistance (RDS(ON)) and low input capacitanc ...
Feb 06, 2012 |
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Toshiba develops essential technology for spintronics-based MOS field-effect transistor
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Dec 09, 2009 |
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Search results for mosfet
Researchers publish a detailed review of electrical contacts in one and two dimensional nanomaterials
(PhysOrg.com) -- Researchers from the NIST Center for Nanoscale Science and Technology and Sandia National Laboratories have published a detailed review of recent experimental and theoretical work highlighting the unusual ...
Feb 16, 2012 |
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Quantum tunneling results in record transistor performance
(PhysOrg.com) -- Controlling power consumption in mobile devices and large scale data centers is a pressing concern for the computer chip industry. Researchers from Penn State and epitaxial wafer maker IQE ...
Dec 12, 2011 |
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Infineon succeeds in producing chips on new 300-millimeter thin wafer technology for power semiconductors
Infineon Technologies AG has produced the first chips ("first silicon") on a 300-millimeter thin wafer for power semiconductors at the Villach site in Austria. This makes Infineon the first company in the ...
Oct 10, 2011 |
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Silicon, nitride LEDs integrated onto a single chip for one-bit digital counters
Silicon-based semiconductor devices dominate the microelectronics industry and are used for the fabrication of high density integrated circuits comprising of memory and processing devices. However, silicon ...
Mar 25, 2011 |
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NXP builds a smarter way to energy efficiency with world's lowest standby power
NXP Semiconductors today announced a new generation of GreenChip power solutions which feature the lowest standby capability in the industry, reaching levels below 10mW. The NXP GreenChip power ICs, also known ...
Mar 09, 2011 |
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European Union aims to increase electronic efficiency and eliminate power consumption
Today, Ecole Polytechnique Federale de Lausanne and IBM announced a major research initiative, with several leading academic and corporate research organizations across Europe, to address the alarming growth of energy consumption ...
Technology / Energy & Green Tech
Oct 27, 2010 |
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Carbon Based Chips May One Day Replace Silicon Transistors
(PhysOrg.com) -- IBM researchers are hopeful that, over the next decade, silicon-based transistors will be replaced by carbon-based transistors. IBM has already laid out the ground work for carbon-based transistors.
Digital quantum batteries inspired by plasma TVs
(PhysOrg.com) -- Plasma TVs are notorious for their excessive use of electricity, but the same principle used to produce high definition pictures in the TVs could result in the development of a new type of ...
Digital Quantum Battery Could Boost Energy Density Tenfold
(PhysOrg.com) -- Physicists theorize that quantum phenomena could provide a major boost to batteries, with the potential to increase energy density up to 10 times that of lithium ion batteries. According to ...
New 'finFETs' promising for smaller transistors, more powerful chips
(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...
Nov 10, 2009 |
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