News tagged with memory states
Research group creates longer lived and more efficient quantum memory
(Phys.org) -- One of the main sticking points to creating a true quantum computer capable of performing meaningful work, is the problem of storing quantum state information in memory. Recent efforts have resulted in highly ...
May 30, 2012 |
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Buffalo shows SSDs with MRAM at Japan show
(Phys.org) -- Japan-based storage experts, Buffalo, has introduced a new line of solid state drives (SSDs) that use MRAM cache (instead of standard SDRAM). The company’s new line of solid state drives ...
May 15, 2012 |
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Toshiba manufactures 19nm generation NAND Flash Memory with world's largest density, smallest die size
Toshiba Corporation today announced breakthroughs in NAND flash that secure major advances in chip density and performance. In the 19 nanometer generation, Toshiba has developed a 3-bit-per-cell 128 gigabit (Gb) chip with ...
Feb 23, 2012 |
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Intel packs performance and reliability into its latest SSD 520 series
Intel Corporation announced today its fastest, most robust client/consumer solid-state drive (SSD) to date, the Intel Solid-State Drive 520 Series (Intel SSD 520), a 6 gigabit-per-second (gbps) SATA III SSD ...
Feb 07, 2012 |
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Seagate soups up laptop PC performance with fast, second-generation solid state hybrid drive
Seagate is now shipping the second generation of Momentus XT, its groundbreaking solid state hybrid drive for consumer and commercial laptops and the company’s fastest drive ever for personal computers. ...
Dec 08, 2011 |
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Seagate intros second-generation solid state hybrid drive
Seagate is now shipping the second generation of Momentus XT, its groundbreaking solid state hybrid drive for consumer and commercial laptops and the company’s fastest drive ever for personal computers. ...
Nov 29, 2011 |
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Thin drives -- the next generation of portable memory
Tablets are fast becoming the media device of choice nowadays for work and play, particularly with the advent of iPads and the Samsung Galaxy Tab into the mobile device market. With a volume of 19.5 million ...
Nov 17, 2011 |
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SDSC readying 'Gordon' supercomputer for pre-production trials this month
The San Diego Supercomputer Center (SDSC) at the University of California, San Diego, will this month launch a pre-production phase of Gordon, the first high-performance supercomputer to use large amounts of flash-based SSD ...
Aug 10, 2011 |
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Magnetic control of anomalous hall effect induced by spin chirality
Institute for Solid State Physics, the University of Tokyo and RIKEN announced that researchers from both institutes succeeded in the magnetic control of anomalous Hall effect (AHE) induced by spin chirality. Details were ...
Jun 29, 2011 |
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Phase change memory-based 'moneta' system points to the future of computer storage
A University of California, San Diego faculty-student team is about to demonstrate a first-of-its kind, phase-change memory solid state storage device that provides performance thousands of times faster than ...
Jun 02, 2011 |
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Researchers control conduction, surface states in topological insulator nanoribbons
In recent years, topological insulators have become one of the hottest topics in physics. These new materials act as both insulators and conductors, with their interior preventing the flow of electrical currents while their ...
Feb 14, 2011 |
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Toshiba introduces enterprise-class solid state drive family
Extending its position in the enterprise storage market, Toshiba Corporation today announced its new family of enterprise-class solid state drives (SSDs). Developed to meet the market's demand for higher ...
Dec 14, 2010 |
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Physicists demonstrate a four-fold quantum memory
Researchers at the California Institute of Technology (Caltech) have demonstrated quantum entanglement for a quantum state stored in four spatially distinct atomic memories.
Nov 17, 2010 |
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Autonomous quantum error correction technique proposed for quantum memories
(PhysOrg.com) -- While words such as "powerful" and "efficient" are often used to describe the potential of quantum computing, these quantum systems can be very fragile at the same time. Errors in quantum ...
Aug 04, 2010 |
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Samsung, Toshiba to Support New Standardized NAND Specification for High-performance Applications
Samsung Electronics and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second ...
Jul 22, 2010 |
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