Many military radio frequency (RF) systems, like radar and communication systems, use a class of power amplifiers (PAs) called monolithic microwave integrated circuits (MIMIC). MMIC PAs using gallium nitride (GaN) transistors ...
Electronics & Semiconductors
May 1, 2013
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Fujitsu Laboratories today announced that it has successfully developed the world's first single-chip transceiver using gallium nitride (GaN) high electron mobility transistor (HEMT) technology that features an output of ...
Electronics & Semiconductors
Jun 20, 2012
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Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...
Electronics & Semiconductors
Jun 6, 2011
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Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in ...
Electronics & Semiconductors
Oct 6, 2010
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Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the range of 70 to ...
Electronics & Semiconductors
Sep 30, 2009
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Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced power consumption ...
Electronics & Semiconductors
Jun 24, 2009
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