Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced power consumption ...
Electronics & Semiconductors
Jun 24, 2009
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Scientists at Empa, the Swiss Federal Laboratories for Materials Science and Technology, have further boosted the energy conversion efficiency of flexible solar cells made of copper indium gallium (di)selenide (also known ...
Energy & Green Tech
May 19, 2011
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(PhysOrg.com) -- One of the fields of great interest to scientists and researchers is that of using the quantum world to enhance various aspects of our lives. Advances in quantum cryptography make headlines, and scientists ...
Researchers in Japan have developed a new photodiode that can detect in just milliseconds a certain type of high-energy ultraviolet light, called UVC, which is powerful enough to break the bonds of DNA and harm living creatures. ...
General Physics
Oct 4, 2013
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Powerful electronic components can get very hot. When many components are combined into a single semiconductor chip, heating can become a real problem. An overheating electronic component wastes energy and is at risk of behaving ...
Electronics & Semiconductors
Oct 7, 2016
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(PhysOrg.com) -- University of California, Riverside Professor of Electrical Engineering and Chair of Materials Science and Engineering Alexander Balandin is leading several projects to explore ways to use the unique capabilities ...
Nanomaterials
Dec 21, 2009
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(PhysOrg.com) -- Researchers at the University of Michigan have achieved a long sought-after optics phenomenon that could lead to more efficient and flexible lasers for telecommunications and quantum computing applications, ...
Optics & Photonics
Jun 21, 2010
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Tiny "black holes" on a silicon wafer make for a new type of photodetector that could move more data at lower cost around the world or across a datacenter. The technology, developed by electrical engineers at the University ...
Optics & Photonics
Apr 3, 2017
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Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in ...
Electronics & Semiconductors
Oct 6, 2010
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A newly discovered method for making two-dimensional materials could lead to new and extraordinary properties, particularly in a class of materials called nitrides, say the Penn State materials scientists who discovered the ...
Nanomaterials
Aug 29, 2016
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