Electrical power comes out of wall sockets, of course. But hardly any electronic device can take normal line voltage. Computers, smartphones, LEDs, and chargers, for instance, cannot use electrical energy in that form – ...
Electronics & Semiconductors
Apr 15, 2015
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27
Many military radio frequency (RF) systems, like radar and communication systems, use a class of power amplifiers (PAs) called monolithic microwave integrated circuits (MIMIC). MMIC PAs using gallium nitride (GaN) transistors ...
Electronics & Semiconductors
May 1, 2013
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0
At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.
Electronics & Semiconductors
Jun 7, 2011
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1
Scientists at University College London, in collaboration with groups at the University of Bath and the Daresbury Laboratory, have uncovered the mystery of why blue light-emitting diodes (LEDs) are so difficult to make, by ...
General Physics
Jan 7, 2015
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46
Light-emitting diodes (LEDs) are an increasingly popular technology for use in energy-efficient lighting. Researchers from North Carolina State University have now developed a new technique that reduces defects in the gallium ...
Condensed Matter
Jan 25, 2011
1
0
Photonics is a rapidly growing field in which some of the most sci-fi ideas of the not-so-distant past, are taking form. Now EU-funded research is bringing the notion of an invisibility cloak closer by using microscopic structures ...
Optics & Photonics
Sep 18, 2017
1
19
For the reactors used in the manufacture of LED's there are more promising materials than the ones currently in use, the researchers point out.
Soft Matter
Dec 11, 2015
1
16
In the realm of photonics, the integration of multiple optical devices onto a single substrate holds immense promise for a wide range of applications. This revolutionary approach, known as photonic integration, offers remarkable ...
Optics & Photonics
Jun 21, 2023
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4
Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies – but these GaN devices traditionally break down when exposed to high voltages. Now ...
Electronics & Semiconductors
Feb 2, 2011
0
0
The electronic characteristics of an interface between two wide bandgap semiconductors are determined by researchers at KAUST: an insight that will help improve the efficiency of light-emitting and high-power electronic devices.
Nanomaterials
Nov 13, 2017
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