Faster, smaller and more economical gallium nitride transistors
For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. ...
Novel alloy could produce hydrogen fuel from sunlight
Scientists from the University of Kentucky and the University of Louisville have determined that an inexpensive semiconductor material can be "tweaked" to generate hydrogen from water using sunlight.
Nanowires get into the groove
Weizmann Institute scientists have discovered that growing nanowires out, not up, can keep them in line.
New semiconductor nanowire laser technology could kill viruses, improve DVDs
A team led by a professor at the University of California, Riverside Bourns College of Engineering has made a discovery in semiconductor nanowire laser technology that could potentially do everything from kill viruses to ...
Nano-LEDs emit full visible spectrum of light
NXP brings GaN technology mainstream
At IMS2011 this week, NXP Semiconductors N.V. is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology.
World's first GaN HEMT T/R module operating in the C-Ku band
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that ...
Zeroing in on the elusive green LED
Researchers at Rensselaer Polytechnic Institute have developed a new method for manufacturing green-colored LEDs with greatly enhanced light output.
New technique boosts high-power potential for gallium nitride electronics
Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies but these GaN devices traditionally break down when exposed to ...
Nanowires exhibit giant piezoelectricity
Gallium nitride (GaN) and zinc oxide (ZnO) are among the most technologically relevant semiconducting materials. Gallium nitride is ubiquitous today in optoelectronic elements such as blue lasers (hence the blue-ray disc) ...
Voiding defects: New technique makes LED lighting more efficient
Light-emitting diodes (LEDs) are an increasingly popular technology for use in energy-efficient lighting. Researchers from North Carolina State University have now developed a new technique that reduces defects in the gallium ...
Panasonic develops gallium nitride (GaN) power transistor on silicon with blocking-voltage-boosting structure
Panasonic today announced the development of a new technique to drastically increase the blocking voltage of Gallium Nitride (GaN) -based power switching transistor on silicon (Si) substrates. The blocking ...
Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band
Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications ...
Multifunctional smart sensors and high-power devices on a computer chip
Researchers from North Carolina State University have patented technology that is expected to revolutionize the global energy and communications infrastructure and create U.S. jobs in the process.