Operators of NASA's Mars Exploration Rover Opportunity plan to drive the rover into a valley this month where Opportunity will be active through the long-lived rover's seventh Martian winter, examining outcrops that contain ...
Space Exploration
Jul 7, 2015
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NASA's Mars Exploration Rover Opportunity climbed last month to an overlook for surveying "Marathon Valley," a science destination chosen because spectrometer observations from orbit indicate exposures of clay minerals.
Space Exploration
Mar 9, 2015
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NASA's Mars Exploration Rover Opportunity is nearing a location on Mars at which its driving distance will surpass the length of a marathon race.
Space Exploration
Feb 12, 2015
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After completing two drives this week, NASA's Mars Exploration Rover Opportunity has paused to photograph the panoramic vista from the highest point the rover has reached during its 40 months of exploring the western rim ...
Space Exploration
Jan 9, 2015
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NASA's Opportunity rover is soaking in the view from its perch atop a Martian hill as engineers continue to fix a problem with its computer memory.
Space Exploration
Jan 7, 2015
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NASA's Mars rover Opportunity has been working well into its golden years - after nearly 11 years roaming the Red Planet, it has survived more than 40 times past its warranty. But now, this trusty veteran explorer is experiencing ...
Space Exploration
Jan 1, 2015
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NASA's Opportunity Mars rover, also known as "Oppy", is continuing its traverse southward on the western rim of Endeavour Crater despite computer resets and "amnesia" that have occurred after reformatting the rover's flash ...
Space Exploration
Dec 24, 2014
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(Phys.org) —New molecules could be the key to solving a looming problem with flash memory storage, researchers say in a new report published in the journal Nature today.
General Physics
Nov 20, 2014
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SK Hynix, the world's second-largest memory chip maker, reported Thursday a record high quarterly net profit for the three months to September on strong sales and currency earnings.
Business
Oct 23, 2014
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Samsung Electronics today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).
Hardware
Oct 10, 2014
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